參數(shù)資料
型號: EDI8L21664V
英文描述: 2x64Kx16 SRAM(3.3V,2x64Kx16靜態(tài)RAM)
中文描述: 2x64Kx16 SRAM的電壓(3.3V,2x64Kx16靜態(tài)內(nèi)存)
文件頁數(shù): 2/6頁
文件大?。?/td> 60K
代理商: EDI8L21664V
2
EDI8L21664V Rev. 0 1/98 ECO #9704
EDI8L21664V
2x64Kx16SRAM
Pin Descriptions
Pin
Symbol
Type
Description
A0-A14
Input
Addresses
A15A
Input
Addresses: A15 on Bank 'A' of memory
A15B
Input
Addresses: A15 on Bank 'B' of memory
WE\
Input
Write Enable: This active LOW input allows a full 16-bit WRITE to occur.
CE1\
Input
Chip Enable: This active LOW input is used to enable the 'A' Bank of the device.
CE2\
Input
Chip Enable: This active LOW input is used to enable the 'B' Bank of the device.
G\
Input
Output Enable: This active LOW asynchronous input enables the data output drivers.
Various
DQ0-15
Input/Output
Data Inputs/Outputs
Various
Vcc
Supply
Core power supply: +3.3V -5%/+10%
Various
Vss
Ground
DQ0-DQ15
A0-A14
G\
WE\
CE1\
A15 A
CE2\
A15 B
64K x 16
SRAM
64K x 16
SRAM
Block Diagram
相關(guān)PDF資料
PDF描述
EDI8L21665V 2x64Kx16 SRAM(2x64Kx16靜態(tài)RAM)
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