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參數資料
| 型號： | EDI88512C |
| 英文描述： | 512Kx8 Monolithic SRAM(512Kx8 CMOS單片靜態(tài)RAM) |
| 中文描述： | 512Kx8單片的SRAM（512Kx8的CMOS單片靜態(tài)內存） |
| 文件頁數： | 1/7頁 |
| 文件大小： | 98K |
| 代理商： | EDI88512C |
1
White Electronic Designs Corporation Phoenix, AZ (602) 437-1520
HI-RELIABILITY PRODUCT
EDI88512C
512Kx8 Monolithic SRAM CMOS
FEATURES
s 512Kx8 bit CMOS Static
s Random Access Memory
Access Times of 70, 85, 100ns
Data Retention Function (LP version)
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
s 32 lead JEDEC Approved Evolutionary Pinout
Ceramic Sidebrazed 600 mil DIP (Package 9)
Ceramic SOJ (Package 140)
s Single +5V (
±10%) Supply Operation
September 2000 Rev. 10
PIN DESCRIPTION
I/O0-7
Data Inputs/Outputs
A0-18
Address Inputs
WE
Write Enables
CS
Chip Selects
OE
Output Enable
VCC
Power (+5V
±10%)
VSS
Ground
NC
Not Connected
BLOCK DIAGRAM
Memory Array
Address
Buffer
Address
Decoder
I/O
Circuits
A-18
I/O-7
WE
CS
OE
FIG. 1
PIN CONFIGURATION
The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.
The 32 pin DIP pinout adheres to the JEDEC evolutionary standard
for the four megabit device. Both the DIP and CSOJ packages are
pin for pin upgrades for the single chip enable 128K x 8, the
EDI88128C. Pins 1 and 30 become the higher order addresses.
A Low Power version with Data Retention (EDI88512LP) is also
available for battery backed applications. Military product is
available compliant to Appendix A of MIL-PRF-38535.
TOP VIEW
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A
I/O
I/O1
I/O2
VSS
相關PDF資料 |
PDF描述 |
|---|---|
| EDI8C32128C | 128Kx32 SRAM Module(低功耗CMOS，512Kx32靜態(tài)RAM模塊（存取時間15，17，20，25，35，45，55ns）) |
| EDI8C32512CA | 512Kx32 SRAM Module(低功耗CMOS，128Kx32靜態(tài)RAM模塊（存取時間15，17，20，25，35，45，55ns）) |
| EDI8C32512LPA20EC | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 20-HTSSOP T&R |
| EDI8C32512LPA20EI | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP |
| EDI8C32512LPA20EM | Integrated Buffers with VCOM; Temperature Range: -40°C to 85°C; Package: 24-HTSSOP T&R |
相關代理商/技術參數 |
參數描述 |
|---|---|
| EDI88512C/LP-C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM |
| EDI88512C/LP-N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SRAM |
| EDI88512C120CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 DIP, TINNED LEADS, M - Bulk |
| EDI88512C120NB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 120NS, 32 CSOJ, TINNED LEADS, - Bulk |
| EDI88512C70CB | 制造商:Microsemi Corporation 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk 制造商:White Electronic Designs 功能描述:512K X 8 SRAM MONOLITHIC, 5V, 70NS, 32 DIP, TINNED LEADS, MI - Bulk |
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