參數(shù)資料
型號: EDD2516AETA
廠商: Elpida Memory, Inc.
英文描述: 256M bits DDR SDRAM
中文描述: 256M比特DDR內(nèi)存
文件頁數(shù): 37/52頁
文件大小: 492K
代理商: EDD2516AETA
EDD2508AETA, EDD2516AETA
Data Sheet E0859E50 (Ver. 5.0)
37
A Write command to the consecutive Read command interval: To interrupt the write operation
Destination row of the consecutive read
command
Bank
address
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
—*
1
Row address State
Operation
1. Same
Same
ACTIVE
2. Same
Different
3. Different
Any
ACTIVE
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
—*
1
IDLE
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write
operation in this case.
WRITE to READ Command Interval (Same bank, same ROW address)
in0
in1
in2
out0 out1
out2 out3
CK
/CK
DM
DQ
Command
t1
t0
t2
t3
t4
t5
t6
t7
t8
BL = 4
CL = 3
DQS
Data masked
1 cycle
READ
NOP
WRIT
High-Z
High-Z
CL=3
[WRITE to READ delay = 1 clock cycle]
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