參數(shù)資料
型號(hào)： EDD2504AKTA-7B-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 256M bits DDR SDRAM (64M words x 4 bits)
中文描述： 64M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： ROHS COMPLIANT, PLASTIC, TSOP2-66
文件頁(yè)數(shù)： 5/49頁(yè)
文件大小： 441K
代理商： EDD2504AKTA-7B-E
EDD2504AKTA
Data Sheet E0457E10 (Ver. 1.0)
5
DC Characteristics 1 (TA = 0 to +70
°
C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACT-PRE)
IDD0
-6B
-7A, -7B
100
90
mA
CKE
≥
VIH,
tRC = tRC (min.)
CKE
≥
VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
1, 2, 9
Operating current
(ACT-READ-PRE)
IDD1
-6B
-7A, -7B
125
110
mA
1, 2, 5
Idle power down standby
current
IDD2P
3
mA
CKE
≤
VIL
4
Floating idle standby current
IDD2F
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
25
20
20
18
20
18
55
50
170
150
180
160
170
165
mA
CKE
≥
VIH, /CS
≥
VIH
DQ, DQS, DM = VREF
CKE
≥
VIH, /CS
≥
VIH
DQ, DQS, DM = VREF
4, 5
Quiet idle standby current
IDD2Q
mA
4, 10
Active power down standby
current
IDD3P
mA
CKE
≤
VIL
3
Active standby current
IDD3N
mA
CKE
≥
VIH, /CS
≥
VIH
tRAS = tRAS (max.)
CKE
≥
VIH, BL = 2,
CL = 2.5
CKE
≥
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
≤
VIL or
≥
VIH
Input
≥
VDD – 0.2 V
Input
≤
0.2 V
3, 5, 6
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD4R
mA
1, 2, 5, 6
IDD4W
mA
1, 2, 5, 6
Auto Refresh current
IDD5
mA
Self refresh current
IDD6
3
mA
Operating current
(4 banks interleaving)
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycle.
10. Command/Address stable at
≥
VIH or
≤
VIL.
IDD7A
-6B
-7A, -7B
320
270
mA
BL = 4
1, 5, 6, 7
DC Characteristics 2 (TA = 0 to +70
°
C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–2
2
μA
VDD
≥
VIN
≥
VSS
Output leakage current
ILO
–5
5
μA
VDDQ
≥
VOUT
≥
VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
相關(guān)PDF資料
PDF描述
EDD2504AKTA-E 256M bits DDR SDRAM (64M words x 4 bits)
EDD2508AKTA-5-E 256M bits DDR SDRAM (32M words x 8 bits, DDR400)
EDD2508AKTA-5B-E 256M bits DDR SDRAM (32M words x 8 bits, DDR400)
EDD2508AKTA-5C-E 256M bits DDR SDRAM (32M words x 8 bits, DDR400)
EDD2508AKTA-5 256M bits DDR SDRAM (32M words x 8 bits, DDR400)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDD2504AKTA-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM (64M words x 4 bits)
EDD2508AETA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM
EDD2508AETA-5B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM
EDD2508AETA-5C-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM
EDD2508AETA-6B-E 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits DDR SDRAM
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