參數(shù)資料
型號(hào)： EDD2504AKTA-7A
廠商： ELPIDA MEMORY INC
元件分類(lèi)： DRAM
英文描述： 256M bits DDR SDRAM (64M words x 4 bits)
中文描述： 64M X 4 DDR DRAM, 0.75 ns, PDSO66
封裝： PLASTIC, TSOP2-66
文件頁(yè)數(shù)： 4/49頁(yè)
文件大?。?/td> 441K
代理商： EDD2504AKTA-7A
EDD2504AKTA
Data Sheet E0457E10 (Ver. 1.0)
4
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 200 μs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Voltage on any pin relative to VSS
VT
–1.0 to +3.6
V
Supply voltage relative to VSS
VDD
–1.0 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TA
0 to +70
°
C
Storage temperature
Tstg
–55 to +125
°
C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = 0 to +70
°
C)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD,
VDDQ
VSS,
VSSQ
2.3
2.5
2.7
V
1
0
0
0
V
Input reference voltage
VREF
0.49
×
VDDQ
0.50
×
VDDQ 0.51
×
VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
Notes: 1. VDDQ must be lower than or equal to VDD.
2. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
3. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
4. VIN (DC) specifies the allowable DC execution of each differential input.
5. VID (DC) specifies the input differential voltage required for switching.
6. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V if measurement.
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5
×
VDDQ
0.2V 0.5
×
VDDQ
0.5
×
VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
V
5, 6
相關(guān)PDF資料
PDF描述
EDD2504AKTA-7B 256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA-7B-E 256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA-E 256M bits DDR SDRAM (64M words x 4 bits)
EDD2508AKTA-5-E 256M bits DDR SDRAM (32M words x 8 bits, DDR400)
EDD2508AKTA-5B-E 256M bits DDR SDRAM (32M words x 8 bits, DDR400)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDD2504AKTA-7A-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA-7B 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA-7B-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR SDRAM (64M words x 4 bits)
EDD2504AKTA-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR SDRAM (64M words x 4 bits)
EDD2508AETA 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR SDRAM
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