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參數(shù)資料
| 型號(hào)： | EDD1216AJTA-7A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 128M bits DDR SDRAM |
| 中文描述： | 8M X 16 DDR DRAM, 0.75 ns, PDSO66 |
| 封裝： | ROHS COMPLIANT, PLASTIC, TSOP2-66 |
| 文件頁數(shù)： | 20/52頁 |
| 文件大小： | 513K |
| 代理商： | EDD1216AJTA-7A-E |
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EDD1216AJTA
Data Sheet E0972E30 (Ver. 3.0)
20
Current state
Write with auto-
pre-charge*
10
/CS
/RAS
/CAS /WE
Address
Command
Operation
Next state
H
×
×
×
×
DESL
NOP
Precharging
L
H
H
H
×
NOP
NOP
Precharging
L
H
H
L
×
BST
ILLEGAL
—
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
14
—
L
H
L
L
BA, CA, A10
WRIT/WRIT A
ILLEGAL*
14
—
L
L
H
H
BA, RA
ACT
ILLEGAL*
11, 14
—
L
L
H
L
BA, A10
PRE, PALL
ILLEGAL*
11, 14
—
Remark: H: VIH. L: VIL.
×
: VIH or VIL
Notes: 1. The DDR SDRAM is in "Precharging" state for tRP after precharge command is issued.
2. The DDR SDRAM reaches "IDLE" state tRP after precharge command is issued.
3. The DDR SDRAM is in "Refresh" state for tRFC after auto-refresh command is issued.
4. The DDR SDRAM is in "Activating" state for tRCD after ACT command is issued.
5. The DDR SDRAM is in "Active" state after "Activating" is completed.
6. The DDR SDRAM is in "READ" state until burst data have been output and DQ output circuits are turned
off.
7. The DDR SDRAM is in "READ with auto-precharge" from READA command until burst data has been
output and DQ output circuits are turned off.
8. The DDR SDRAM is in "WRITE" state from WRIT command to the last burst data are input.
9. The DDR SDRAM is in "Write recovering" for tWR after the last data are input.
10. The DDR SDRAM is in "Write with auto-precharge" until tWR after the last data has been input.
11. This command may be issued for other banks, depending on the state of the banks.
12. All banks must be in "IDLE".
13. Before executing a write command to stop the preceding burst read operation, BST command must be
issued.
14. The DDR SDRAM supports the concurrent auto-precharge feature, a read with auto-precharge enabled,or
a write with auto-precharge enabled, may be followed by any column command to other banks, as long as
that command does not interrupt the read or write data transfer, and all other related limitations apply.
(E.g. Conflict between READ data and WRITE data must be avoided.)
The minimum delay from a read or write command with auto precharge enabled, to a command to a
different bank, is summarized below.
From command
interrupting command)
L
L
L
×
×
ILLEGAL
—
To command (different bank, non-
Minimum delay
(Concurrent AP supported)
Units
Read w/AP
Read or Read w/AP
BL/2
tCK
Write or Write w/AP
CL(rounded up)+ (BL/2)
tCK
Precharge or Activate
1
tCK
Write w/AP
Read or Read w/AP
1 + (BL/2) + tWTR
tCK
Write or Write w/AP
BL/2
tCK
Precharge or Activate
1
tCK
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDD1216AJTA-7B-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128M bits DDR SDRAM |
| EDD1216ALTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2) |
| EDD1216ALTA-1A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2) |
| EDD1216ALTA-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2) |
| EDD1216ALTA-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128 M-bit Synchronous DRAM with Double Data Rate (4-bank, SSTL_2) |
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