參數(shù)資料
型號(hào): ECM028
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 104K
代理商: ECM028
EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
10
ECM028
Korean PCS CDMA
3.5V POWER AMPLIFIER MODULE
PRELIMINARY DATA SHEET
SS-000520-000
Revision E
ECM028 Operating Principles and Key Features
ECM028 is a 6x6mm size Power Amplifier Module (PAM) for the Korean PCS
band CDMA handset market..
The PAM utilizes InGaP HBT technology and a multi layer laminate base, over
molded modular package with a LGA signal pad.
I. In GaP HBT offers Reliability and Quality
EiCs proprietary InGaP HBT provides excellent reliability and is used in
the infrastructure industry. The InGaP HBT is inherently superior to AlGaAs
HBT. The surface defect density in InGaP is much lower than that of AlGaAs.
The HBT life test of EiC InGaP HBT has gone through 315
oC junction
temperature and 50kA/cm
2 for over 6000 hours (8 months), translating to multi-
million hours lifetime or longer in the operation envelope [1]. This kind of robust
performance is far superior to conventional AlGaAs HBT.
The InGaP HBT PAM goes through a product burn-in test as well. A large
sample group, usually 100 pieces, goes through burn-in test at an ambient
temperature of 125 to 145
oC for 1000 hours. The FIT number is than calculated
based upon the data collected. The MTTF is simply 1/FIT, this MTTF should
agree with the HBT life test results.
The agreement between the MTTF of HBT from life test and the FIT is
essential: it validates both tests! If there is a large discrepancy [2], the quality
claim may be flawed.
Although handset applications do not have as stringent operating
requirements as the infrastructure market, the high reliability of InGaP HBT offers
an assurance to the user of a high quality product designed for high volume
production.
II. InGaP HBT and Patent-pending Circuit Design Offers Low Temperature
Variation
Current gain of InGaP HBT varies about 10% over –40 to +85
oC range,
compared with 50% of AlGaAs HBT. This low gain variation over temperature,
coupled with the patent-pending circuit design approach, provides for more
stable electrical performance.
III. ECM028 Offers High Gain and Margin for Transmitter Chain Design
The typical gain of the ECM028 is 28dB. This high gain allows the driver
amplifier to run very linear which results in reduced current. Taking into account
the 3dB loss of the BPF in front of the PAM, the driver needs to deliver only
4dBm linear power. The P1dB of the driver amplifier should be more than 10dBm.
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