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參數(shù)資料
| 型號(hào)： | EBD25RB4ALFB-7A |
| 英文描述： | SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC |
| 中文描述： | 內(nèi)存|復(fù)員| 32MX72 |的CMOS |內(nèi)存| 184PIN |塑料 |
| 文件頁(yè)數(shù)： | 4/17頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | EBD25RB4ALFB-7A |
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EBD25RB4ALFB
Data Sheet . E0236E10 (Ver. 1.0)
12
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade
max.
Unit
Test condition
Notes
Operating current (ACTV-PRE)
ICC0
-7A
-75
-1A
TBD
mA
CKE ≥ VIH,
tRC = tRC (min.)
1, 2, 5
Operating current (ACTV-READ-
PRE)
ICC1
-7A
-75
-1A
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5,
tRC = tRC (min.)
1, 2, 5
Idle power down standby current ICC2P
-7A
-75
-1A
TBD
mA
CKE ≤ VIL
4
Idle standby current
ICC2N
-7A
-75
-1A
TBD
mA
CKE ≥ VIH, /CS ≥ VIH
4
Active power down standby
current
ICC3P
-7A
-75
-1A
TBD
mA
CKE ≤ VIL
3
Active standby current
ICC3N
-7A
-75
-1A
TBD
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
3
Operating current
(Burst read operation)
ICC4R
-7A
-75
-1A
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
Operating current
(Burst write operation)
ICC4W
-7A
-75
-1A
TBD
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
1, 2, 5, 6
Auto refresh current
ICC5
-7A
-75
-1A
TBD
mA
tRFC = tRFC (min.)
Input ≤ VIL or ≥ VIH
Self refresh current
ICC6
-7A
-75
-1A
TBD
mA
Input ≥ VDD – 0.2V
Input ≤ 0.2V.
Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = tCK (min.) in general.
DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Notes
Input leakage current
ILI
–10
10
A
VDD ≥ VIN ≥ VSS
Output leakage current
ILO
–5
5
A
VDD ≥ VOUT ≥ VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
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