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參數(shù)資料
| 型號： | EBD25RB4ALFB-7A |
| 英文描述： | SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC |
| 中文描述： | 內存|復員| 32MX72 |的CMOS |內存| 184PIN |塑料 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大小： | 158K |
| 代理商： | EBD25RB4ALFB-7A |
EBD25RB4ALFB
Data Sheet . E0236E10 (Ver. 1.0)
11
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 1ms and then, execute power on sequence and CBR (Auto) refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
–0.5 to +3.6
V
Supply voltage relative to VSS
VDD, VDDQ
–0.5 to +3.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
21
W
Operating temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C)
Parameter
Symbol
min.
Typ
max.
Unit
Notes
Supply voltage
VDD, VDDQ
2.3
2.5
2.7
V
1, 2
VSS
0
V
Input reference voltage
VREF
0.49
× VDDQ —
0.51
× VDDQ V
1
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
1
DC Input high voltage
VIH
VREF + 0.18
—
VDDQ + 0.3
V
1, 3
DC Input low voltage
VIL
–0.3
—
VREF – 0.18
V
1, 4
DC Input signal voltage
VIN (dc)
–0.3
—
VDDQ + 0.3
V
5
DC differential input voltage
VSWING (dc) 0.36
—
VDDQ + 0.6
V
6
Notes: 1. All parameters are referred to VSS, when measured.
2. VDDQ must be lower than or equal to VDD.
3. VIH is allowed to exceed VDD up to 4.6V for the period shorter than or equal to 5ns.
4. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
5. VIN (dc) specifies the allowable dc execution of each differential input.
6. VSWING (dc) specifies the input differential voltage required for switching.
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