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參數(shù)資料
| 型號： | EBD12RB8ALFB-1A |
| 英文描述： | SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC |
| 中文描述： | 內存|復員| 16MX72 |的CMOS |內存| 184PIN |塑料 |
| 文件頁數(shù)： | 6/17頁 |
| 文件大?。?/td> | 200K |
| 代理商： | EBD12RB8ALFB-1A |
EBD12RB8ALFB
Data Sheet E0235E10 (Ver. 1.0)
14
Synchronous Characteristics Example
tCK
7.5 ns
10 ns
Symbol
min.
max.
min.
max.
Unit
tCH
3.4
4.1
4.5
5.5
ns
tCL
3.4
4.1
4.5
5.5
ns
tRPRE
6.75
8.25
9
11
ns
tRPST
3
4.5
4
6
ns
tWPRE
0.25
—
2.5
—
ns
tWPST
3
4.5
4
6
ns
tDQSS
5.6
9.4
7.5
12.5
ns
tDQSH
2.63
—
3.5
—
ns
tDQSL
2.63
—
3.5
—
ns
tDSS
1.5
—
2
—
ns
tDSH
1.5
—
2
—
ns
tWTR
7.5
—
10
—
ns
Asynchronous Characteristics
-7A
-75
-1A
Parameter
Symbol
min.
max.
min.
max.
min.
max.
Unit
ACT to REF/ACT command period
(operation)
tRC
65
—
65
—
70
—
ns
REF to REF/ACT command period
(refresh)
tRFC
75
—
75
—
80
—
ns
ACT to PRE command period
tRAS
45
120,000
45
120,000
50
120,000
ns
PRE to ACT command period
tRP
20
—
20
—
20
—
ns
ACT to READ/WRITE delay
tRCD
20
—
20
—
20
—
ns
ACT(one) to ACT(another) command
period
tRRD
15
—
15
—
15
—
ns
Write recovery time
tWR
2
—
2
—
2
—
CLK
Auto precharge write recovery time
+ precharge time
tDAL
TBD
—
TBD
—
TBD
—
ns
Mode register set command cycle time
tMRD
15
—
15
—
15
—
ns
Exit self refresh to command
tXSNR
75
—
75
—
80
—
ns
Average periodic Refresh interval
tREF1
—
15.6
—
15.6
—
15.6
s
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|---|---|
| EBD12RB8ALFB-75 | SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC |
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| EBD25RB4ALFB-1A | SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| EBD12RB8ALFB-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB Registered DDR SDRAM DIMM |
| EBD12RB8ALFB-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB Registered DDR SDRAM DIMM |
| EBD12UB8ALF | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB Unbuffered DDR SDRAM DIMM |
| EBD12UB8ALF-1A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB Unbuffered DDR SDRAM DIMM |
| EBD12UB8ALF-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:128MB Unbuffered DDR SDRAM DIMM |
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