參數(shù)資料
型號: DSPIC30F6010-20I/PF
廠商: Microchip Technology
文件頁數(shù): 53/110頁
文件大?。?/td> 0K
描述: IC PSPIC MCU/DSP 144K 80TQFP
產(chǎn)品培訓(xùn)模塊: Serial Communications using dsPIC30F CAN
Serial Communications using dsPIC30F I2C
Serial Communications using dsPIC30F SPI
Serial Communications using dsPIC30F UART
dsPIC30F 12 bit ADC - Part 2
dsPIC30F Addressing Modes - Part 1
dsPIC30F Architecture - Part 1
dsPIC30F DSP Engine & ALU
dsPIC30F Interrupts
dsPIC30F Motor Control PWM
dsPIC Timers
Asynchronous Stimulus
dsPIC30F Addressing Modes - Part 2
dsPIC30F Architecture - Part 2
dsPIC30F 12-bit ADC Part 1
標(biāo)準(zhǔn)包裝: 90
系列: dsPIC™ 30F
核心處理器: dsPIC
芯體尺寸: 16-位
速度: 20 MIPS
連通性: CAN,I²C,SPI,UART/USART
外圍設(shè)備: 高級欠壓探測/復(fù)位,LVD,電機(jī)控制 PWM,QEI,POR,PWM,WDT
輸入/輸出數(shù): 68
程序存儲器容量: 144KB(48K x 24)
程序存儲器類型: 閃存
EEPROM 大小: 4K x 8
RAM 容量: 8K x 8
電壓 - 電源 (Vcc/Vdd): 2.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 80-TQFP
包裝: 托盤
配用: DM300019-ND - BOARD DEMO DSPICDEM 80L STARTER
AC164314-ND - MODULE SKT FOR PM3 80PF
DM300020-ND - BOARD DEV DSPICDEM MC1 MOTORCTRL
其它名稱: DSPIC30F601020IPF
2006 Microchip Technology Inc.
DS70119E-page 45
dsPIC30F6010
6.6
Programming Operations
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. A programming operation is nominally 2 msec in
duration and the processor stalls (waits) until the oper-
ation is finished. Setting the WR bit (NVMCON<15>)
starts the operation, and the WR bit is automatically
cleared when the operation is finished.
6.6.1
PROGRAMMING ALGORITHM FOR
PROGRAM FLASH
The user can erase or program one row of program
Flash memory at a time. The general process is:
1.
Read one row of program Flash (32 instruction
words) and store into data RAM as a data
“image”.
2.
Update the data image with the desired new
data.
3.
Erase program Flash row.
a)
Setup NVMCON register for multi-word,
program Flash, erase, and set WREN bit.
b)
Write address of row to be erased into
NVMADRU/NVMDR.
c)
Write ‘55’ to NVMKEY.
d)
Write ‘AA’ to NVMKEY.
e)
Set the WR bit. This will begin erase cycle.
f)
CPU will stall for the duration of the erase
cycle.
g)
The WR bit is cleared when erase cycle
ends.
4.
Write 32 instruction words of data from data
RAM “image” into the program Flash write
latches.
5.
Program 32 instruction words into program
Flash.
a)
Setup NVMCON register for multi-word,
program Flash, program, and set WREN
bit.
b)
Write ‘55’ to NVMKEY.
c)
Write ‘AA’ to NVMKEY.
d)
Set the WR bit. This will begin program
cycle.
e)
CPU will stall for duration of the program
cycle.
f)
The WR bit is cleared by the hardware
when program cycle ends.
6.
Repeat steps 1 through 5 as needed to program
desired amount of program Flash memory.
6.6.2
ERASING A ROW OF PROGRAM
MEMORY
Example 6-1 shows a code sequence that can be used
to erase a row (32 instructions) of program memory.
EXAMPLE 6-1:
ERASING A ROW OF PROGRAM MEMORY
; Setup NVMCON for erase operation, multi word write
; program memory selected, and writes enabled
MOV
#0x4041,W0
;
MOV
W0,NVMCON
; Init NVMCON SFR
; Init pointer to row to be ERASED
MOV
#tblpage(PROG_ADDR),W0
;
MOV
W0,NVMADRU
; Initialize PM Page Boundary SFR
MOV
#tbloffset(PROG_ADDR),W0
; Intialize in-page EA[15:0] pointer
MOV
W0, NVMADR
; Intialize NVMADR SFR
DISI
#5
; Block all interrupts with priority <7
; for next 5 instructions
MOV
#0x55,W0
MOV
W0,NVMKEY
; Write the 0x55 key
MOV
#0xAA,W1
;
MOV
W1,NVMKEY
; Write the 0xAA key
BSET
NVMCON,#WR
; Start the erase sequence
NOP
; Insert two NOPs after the erase
NOP
; command is asserted
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