參數(shù)資料
型號: DSPIC30F3012-20I/SO
廠商: Microchip Technology
文件頁數(shù): 124/161頁
文件大?。?/td> 0K
描述: IC DSPIC MCU/DSP 24K 18SOIC
產(chǎn)品培訓(xùn)模塊: Serial Communications using dsPIC30F I2C
Serial Communications using dsPIC30F SPI
Serial Communications using dsPIC30F UART
dsPIC30F 12 bit ADC - Part 2
dsPIC30F Addressing Modes - Part 1
dsPIC30F Architecture - Part 1
dsPIC30F DSP Engine & ALU
dsPIC30F Interrupts
dsPIC30F Motor Control PWM
dsPIC Timers
Asynchronous Stimulus
dsPIC30F Addressing Modes - Part 2
dsPIC30F Architecture - Part 2
dsPIC30F 12-bit ADC Part 1
標準包裝: 42
系列: dsPIC™ 30F
核心處理器: dsPIC
芯體尺寸: 16-位
速度: 20 MIPS
連通性: I²C,SPI,UART/USART
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 12
程序存儲器容量: 24KB(8K x 24)
程序存儲器類型: 閃存
EEPROM 大小: 1K x 8
RAM 容量: 2K x 8
電壓 - 電源 (Vcc/Vdd): 2.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 18-SOIC(0.295",7.50mm 寬)
包裝: 管件
配用: XLT18SO-1-ND - SOCKET TRANSITION 18SOIC 300MIL
AC30F005-ND - MODULE SCKT DSPIC30F 18DIP/SOIC
其它名稱: DSPIC30F301220ISO
dsPIC30F2011/2012/3012/3013
DS70139G-page 50
2010 Microchip Technology Inc.
5.4
RTSP Operation
The dsPIC30F Flash program memory is organized
into rows and panels. Each row consists of 32
instructions or 96 bytes. Each panel consists of 128
rows or 4K x 24 instructions. RTSP allows the user to
erase one row (32 instructions) at a time and to
program four instructions at one time. RTSP may be
used to program multiple program memory panels, but
the table pointer must be changed at each panel
boundary.
Each panel of program memory contains write latches
that hold 32 instructions of programming data. Prior to
the actual programming operation, the write data must
be loaded into the panel write latches. The data to be
programmed into the panel is loaded in sequential
order into the write latches; instruction 0, instruction 1,
etc. The instruction words loaded must always be from
a 32 address boundary.
The basic sequence for RTSP programming is to set up
a Table Pointer, then do a series of TBLWT instructions
to load the write latches. Programming is performed by
setting the special bits in the NVMCON register. 32
TBLWTL
and four TBLWTH instructions are required to
load the 32 instructions. If multiple panel programming
is required, the Table Pointer needs to be changed and
the next set of multiple write latches written.
All of the table write operations are single-word writes
(2 instruction cycles), because only the table latches
are written. A programming cycle is required for
programming each row.
The Flash Program Memory is readable, writable and
erasable during normal operation over the entire VDD
range.
5.5
Control Registers
The four SFRs used to read and write the program
Flash memory are:
NVMCON
NVMADR
NVMADRU
NVMKEY
5.5.1
NVMCON REGISTER
The NVMCON register controls which blocks are to be
erased, which memory type is to be programmed, and
start of the programming cycle.
5.5.2
NVMADR REGISTER
The NVMADR register is used to hold the lower two
bytes of the Effective Address. The NVMADR register
captures the EA<15:0> of the last table instruction that
has been executed and selects the row to write.
5.5.3
NVMADRU REGISTER
The NVMADRU register is used to hold the upper byte
of the Effective Address. The NVMADRU register
captures the EA<23:16> of the last table instruction
that has been executed.
5.5.4
NVMKEY REGISTER
NVMKEY is a write-only register that is used for write
protection. To start a programming or an erase
sequence, the user must consecutively write 0x55 and
0xAA to the NVMKEY register. Refer to Section 5.6
“Programming Operations” for further details.
Note:
The user can also directly write to the
NVMADR and NVMADRU registers to
specify a program memory address for
erasing or programming.
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