參數(shù)資料
型號： DSPIC30F2012-30I/ML
廠商： Microchip Technology
文件頁數(shù)： 50/66頁
文件大?。?/td> 0K
描述： IC DSPIC MCU/DSP 12K 28QFN
產(chǎn)品培訓(xùn)模塊： Serial Communications using dsPIC30F I2C
Serial Communications using dsPIC30F SPI
Serial Communications using dsPIC30F UART
dsPIC30F 12 bit ADC - Part 2
dsPIC30F Addressing Modes - Part 1
dsPIC30F Architecture - Part 1
dsPIC30F DSP Engine & ALU
dsPIC30F Interrupts
dsPIC30F Motor Control PWM
dsPIC Timers
Asynchronous Stimulus
dsPIC30F Addressing Modes - Part 2
dsPIC30F Architecture - Part 2
dsPIC30F 12-bit ADC Part 1
標(biāo)準(zhǔn)包裝： 61
系列： dsPIC™ 30F
核心處理器： dsPIC
芯體尺寸： 16-位
速度： 30 MIP
連通性： I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 20
程序存儲器容量： 12KB（4K x 24）
程序存儲器類型： 閃存
RAM 容量： 1K x 8
電壓 - 電源 (Vcc/Vdd)： 2.5 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 10x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 28-VQFN 裸露焊盤
包裝： 管件
產(chǎn)品目錄頁面： 650 (CN2011-ZH PDF)
配用： AC164322-ND - MODULE SOCKET MPLAB PM3 28/44QFN
DV164005-ND - KIT ICD2 SIMPLE SUIT W/USB CABLE
其它名稱： DSPIC30F201230IML
dsPIC30F Flash Programming Specification
DS70102K-page 54
2010 Microchip Technology Inc.
12.0 PROGRAMMING THE
PROGRAMMING EXECUTIVE
TO MEMORY
12.1
Overview
If it is determined that the programming executive does
not reside in executive memory (as described in
Memory”), it must be programmed into executive
memory using ICSP and the techniques described in
Storing the programming executive to executive
memory is similar to normal programming of code
memory. The executive memory must first be erased,
and then the programming executive must be
programmed 32 words at a time. This control flow is
summarized in Table 12-1.
TABLE 12-1:
PROGRAMMING THE PROGRAMMING EXECUTIVE
Command
(Binary)
Data
(Hexadecimal)
Description
Step 1: Exit the Reset vector and erase executive memory.
0000
040100
000000
GOTO 0x100
NOP
Step 2: Initialize the NVMCON to erase executive memory.
0000
24072A
883B0A
MOV
#0x4072, W10
MOV
W10, NVMCON
Step 3: Unlock the NVMCON for programming.
0000
200558
883B38
200AA9
883B39
MOV
#0x55, W8
MOV
W8, NVMKEY
MOV
#0xAA, W9
MOV
W9, NVMKEY
Step 4: Initiate the erase cycle.
0000
—
0000
A8E761
000000
—
000000
A9E761
000000
BSET NVMCON, #15
NOP
Externally time ‘P13a’ ms (see Section 13.0 “AC/DC Characteristics and
NOP
BCLR NVMCON, #15
NOP
Step 5: Initialize the TBLPAG and the write pointer (W7).
0000
200800
880190
EB0380
000000
MOV
#0x80, W0
MOV
W0, TBLPAG
CLR
W7
NOP
Step 6: Initialize the NVMCON to program 32 instruction words.
0000
24001A
883B0A
MOV
#0x4001, W10
MOV
W10, NVMCON
Step 7: Load W0:W5 with the next 4 words of packed programming executive code and initialize W6 for
programming. Programming starts from the base of executive memory (0x800000) using W6 as a read
pointer and W7 as a write pointer.
0000
2<LSW0>0
2<MSB1:MSB0>1
2<LSW1>2
2<LSW2>3
2<MSB3:MSB2>4
2<LSW3>5
MOV
#<LSW0>, W0
MOV
#<MSB1:MSB0>, W1
MOV
#<LSW1>, W2
MOV
#<LSW2>, W3
MOV
#<MSB3:MSB2>, W4
MOV
#<LSW3>, W5
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