參數(shù)資料
型號(hào)： DSDI60-16A
廠商： IXYS CORP
元件分類： 參考電壓二極管
英文描述： Super Fast Recovery Diode
中文描述： 63 A, 1600 V, SILICON, RECTIFIER DIODE, TO-247AD
封裝： TO-247AD, 2 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大小： 21K
代理商： DSDI60-16A
2000 IXYS All rights reserved
1 - 1
DSDI 60
I
FAVM
= 63 A
V
RRM
= 1400-1800 V
t
rr
= 40 ns
Features
G
International standard package
JEDEC TO-247 AD
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
G
Creepage distance between leads
8.5 mm
Applications
G
Antiparallel diode for high frequency
switching devices
G
Anti saturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating and melting
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
High reliability circuit operation
G
Low voltage peaks for reduced
protection circuits
G
Low noise switching
G
Low losses
G
Operating at lower temperature or
space saving by reduced cooling
Dimensions
See DSEI 60-12 on page D5 - 27
x
I
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
V
RSM
V
RRM
Type
V
V
1400
1600
1800
1400
1600
1800
DSDI 60-14A
DSDI 60-16A
DSDI 60-18A
Symbol
Test Conditions
Maximum Ratings
I
FRMS
I
FAVM
x
I
FRM
T
VJ
= T
T
C
= 60 C; rectangular, d = 0.5
t
P
< 10 s; rep. rating, pulse width limited by T
VJM
100
63
800
A
A
A
I
FSM
T
VJ
= 45 C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
540
A
A
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
480
A
A
I
2
t
T
VJ
= 45 C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1250
1200
A
2
s
A
2
s
T
VJ
= 150 C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
950
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
C
C
C
150
-40...+150
P
tot
T
C
= 25 C
416
W
M
d
Mounting torque
0.8...1.2
Nm
Weight
6
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25 C
T
VJ
= 25 C
T
VJ
= 125 C
V
R
= V
V
R
= 0.8 V
RRM
V
R
= 0.8 V
RRM
1
0.5
3
2
mA
mA
mA
V
F
I
F
= 70 A;
T
VJ
T
VJ
= 125 C
=
25 C
2.6
V
V
4.1
V
T0
r
T
For power-loss calculations only
T
VJ
= T
VJM
1.9
10
V
m
R
thJC
R
thCK
0.4
K/W
K/W
0.25
t
rr
I
F
= 1 A; -di/dt = 200 A/ s; V
R
= 30 V; T
VJ
= 25 C
40
ns
t
rr
I
RM
I
F
= 70 A; -di/dt = 500 A/ s; V
R
= 1000 V;
T
VJ
= 25 C
300
60
ns
A
t
rr
I
RM
I
F
= 70 A; -di/dt = 500 A/ s; V
R
= 1000 V;
T
VJ
= 125 C
400
85
ns
A
Super Fast
Recovery Diode
A
C
TO-247 AD
C
C
A
A = Anode, C = Cathode
Preliminary Data
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