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參數(shù)資料
| 型號： | DSEA16-06AC |
| 廠商： | IXYS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HiPerDynFRED Epitaxial Diode(正向電流16A的HiPerDynFRED外延型二極管) |
| 中文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, ISOPLUS220, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 707K |
| 代理商： | DSEA16-06AC |
HiPerDynFRED
TM
Epitaxial Diode
ISOPLUS220
TM
Electrically Isolated Back Surface
Notes: Data given for T
= 25
O
C and per diode unless otherwise specified
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300 s, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
See DSEC 16-06A data sheet for
characteristic curves.
I
FAV
V
RRM
= 600 V
t
rr
= 35 ns
= 2x8 A
V
RSM
V
V
RRM
V
Type
600
600
600
600
DSEA 16-06AC
DSEC 16-06AC
2001 IXYS All rights reserved
DSEA 16-06AC
DSEC 16-06AC
ADVANCE TECHNICAL INFORMATION
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
3
1
2
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
35
A
A
A
T
C
= 120°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 0.9 A; L = 180 μH
V
A
= 1.5
·
V
R
typ.; f = 10 kHz; repetitive
8
50
0.1
mJ
I
AR
T
VJ
T
VJM
T
stg
0.1
A
-55...+175
°C
°C
°C
175
-55...+150
P
tot
V
ISOL
F
C
Weight
T
C
= 25°C
50/60 Hz RMS; I
ISOL
1 mA
mounting force with clip
50
W
V~
2500
11...65 / 2.5...15
N / lb
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C
T
VJ
= 150°C V
R
= V
RRM
I
F
= 10 A;
V
R
= V
RRM
60
μA
mA
0.25
V
F
T
VJ
= 150°C
T
VJ
= 25°C
1.42
2.10
V
V
R
thJC
R
thCH
t
rr
3
K/W
K/W
0.6
I
F
= 1 A; -di/dt = 50 A/μs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/μs
T
VJ
= 100°C
35
ns
I
RM
3.5
4.4
A
DSEA
DSEC
3
1
2
98831 (5/01)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DSEA16-06BC | HiPerDynFRED Epitaxial Diode ISOPLUS220 |
| DSEC16-06BC | HiPerDynFRED Epitaxial Diode ISOPLUS220 |
| DSEA29-06AC | HiPerDynFRED Epitaxial Diode(正向電流30A的HiPerDynFRED外延型二極管) |
| DSEC16-02A | HiPerFRED Epitaxial Diode with common cathode and soft recovery |
| DSEC16-04AS | HiPerFREDTM Epitaxial Diode with common cathode and soft recovery |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DSEA16-06BC | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerDynFRED Epitaxial Diode ISOPLUS220 |
| DSEA29-06AC | 制造商:IXYS Corporation 功能描述:Diode Switching 600V 30A 3-Pin(3+Tab) ISOPLUS 220 制造商:IXYS Corporation 功能描述:DIODE FAST 30A ISOPLUS220 |
| DSEA3 | 制造商:MMD 制造商全稱:MMD Components 功能描述:HC-49/US Surface Mounted Crystal |
| DSEA59-06BC | 制造商:IXYS Corporation 功能描述:Diode Switching 600V 30A 3-Pin(3+Tab) ISOPLUS 220 制造商:IXYS Corporation 功能描述:DIODE FAST 60A ISOPLUS220 |
| DSEB1 | 制造商:MMD 制造商全稱:MMD Components 功能描述:HC-49/US Surface Mounted Crystal |
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