Accurate I2C RTC with Integrated TCXO/Crystal/FRAM 2 ___________" />
參數(shù)資料
型號(hào)： DS32C35-33#T&R
廠商： Maxim Integrated Products
文件頁(yè)數(shù)： 12/22頁(yè)
文件大?。?/td> 0K
描述： IC RTC ACCURATE I2C 3.3V 20-SOIC
產(chǎn)品變化通告： Product Discontinuation 28/Nov/2011
標(biāo)準(zhǔn)包裝： 1,000
類(lèi)型： 時(shí)鐘/日歷
特點(diǎn)： 警報(bào)器，F(xiàn)RAM，閏年，方波輸出，TCXO/晶體
存儲(chǔ)容量： 8KB
時(shí)間格式： HH:MM:SS（12/24 小時(shí)）
數(shù)據(jù)格式： YY-MM-DD-dd
接口： I²C，2 線串口
電源電壓： 2.7 V ~ 3.63 V
電壓 - 電源，電池： 2.3 V ~ 3.6 V
工作溫度： 0°C ~ 70°C
安裝類(lèi)型： 表面貼裝
封裝/外殼： 20-SOIC（0.295"，7.50mm 寬）
供應(yīng)商設(shè)備封裝： 20-SOIC W
包裝： 帶卷 (TR)
DS32B35/DS32C35
Accurate I2C RTC with Integrated
TCXO/Crystal/FRAM
2
_____________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
(TA = -40°C to +85°C, unless otherwise noted.) (Notes 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Voltage Range on Any Pin Relative to Ground......-0.3V to +5.0V
Operating Temperature Range ..........................-40°C to +85°C
Junction Temperature ......................................................+125°C
Storage Temperature Range ...............................-40°C to +85°C
Junction-to-Ambient Thermal Resistance (
θJA) (Note 1)....55°C/W
Junction-to-Case Thermal Resistance (
θJC) (Note 1) ......24°C/W
Lead Temperature (soldering, 10s) .................................+260°C
Soldering Temperature (reflow, 2x max)..........................+260°C
(See the
Handling, PC Board Layout, and Assembly section.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage
VCC
2.70
3.3
3.63
V
Battery Voltage
VBAT
(Note 4)
2.3
3.0
3.6
V
Input High Voltage
VIH
(Note 5)
0.7 x
VCC
VCC +
0.3
V
Input Low Voltage
VIL
-0.3
+0.3 x
VCC
V
ELECTRICAL CHARACTERISTICS
(VCC = 2.7V to 3.63V, TA = -40°C to +85°C, unless otherwise noted.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Accessing RTC
260
Active Supply Current
ICCA
VCC = 3.63V,
SCL = 400kHz
(Note 6)
Accessing FRAM
memory
260
μA
Standby Supply Current
ICCS
VCC = 3.63V, SCL = 0kHz,
32kHz on, SQW off (Note 6)
110
μA
Temperature Conversion Current
ITC
VCC = 3.65V, SCL = 0kHz,
32kHz on, SQW off
575
μA
Power-Fail Voltage
VPF
2.45
2.575
2.70
V
Logic 0 Output
32kHz,
INT/SQW, SDA
VOL
IOL = 3mA
0.4
V
Logic 0 Output
RST
VOL
IOL = 1mA
0.4
V
Output Leakage Current
32kHz,
INT/SQW, SDA
ILEAK
Output high impedance
-1
+1
μA
Input Leakage
SCL
ILI
-1
+1
μA
RST I/O Leakage
IOL
RST high impedance (Note 7)
-200
+10
μA
VIN = VIL(MAX)
50
k
WP Input Resistance
RIN
VIN = VIH(MIN)
1
M
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
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