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參數(shù)資料
| 型號(hào)： | DS2433-Z01 |
| 英文描述： | 4K-Bit 1-Wire EEPROM |
| 中文描述： | 4k位1-Wire EEPROM |
| 文件頁(yè)數(shù)： | 2/19頁(yè) |
| 文件大?。?/td> | 588K |
| 代理商： | DS2433-Z01 |
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DS2433
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from the 1-Wire communication line. The memory is organized as sixteen pages of 256 bits each. The
scratchpad is an additional page that acts as a buffer when writing to memory. Data is first written to the
scratchpad where it may be read back for verification. A copy scratchpad command will then transfer the
data to memory. This process insures data integrity when modifying the memory. The 64-bit registration
number provides a guaranteed unique identity which allows for absolute traceability and acts as node
address if multiple DS2433 are connected in parallel to form a local network. Data is transferred serially
via the 1-Wire protocol which requires only a single data lead and a ground return. The PR-35 and SOIC
packages provide a compact enclosure that allows standard assembly equipment to handle the device
easily for attachment to printed circuit boards or wiring. Typical applications include storage of
calibration constants, board identification and product revision status.
OVERVIEW
The block diagram in Figure 1 shows the relationships between the major control and memory sections of
the DS2433. The DS2433 has three main data components: 1) 64-bit lasered ROM, 2) 256-bit
scratchpad, and 3) 4096-bit EEPROM. The hierarchical structure of the 1-Wire protocol is shown in
Figure 2. The bus master must first provide one of the six ROM Function Commands, 1) Read ROM, 2)
Match ROM, 3) Search ROM, 4) Skip ROM, 5) Overdrive-Skip ROM or 6) Overdrive-Match ROM.
Upon completion of an overdrive ROM command byte executed at standard speed, the device will enter
Overdrive mode where all subsequent communication occurs at a higher speed. The protocol required for
these ROM function commands is described in Figure 9. After a ROM function command is successfully
executed, the memory functions become accessible and the master may provide any one of the four
memory function commands. The protocol for these memory function commands is described in Figure
7. All data is read and written least significant bit first.
PARASITE POWER
The block diagram (Figure 1) shows the parasite-powered circuitry. This circuitry “steals” power
whenever the I/O input is high. I/O will provide sufficient power as long as the specified timing and
voltage requirements are met.
DS2433 BLOCK DIAGRAM
Figure 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS2433S | 4k-Bit 1-Wire EEPROM |
| DS2433T | 4k-Bit 1-Wire EEPROM |
| DS2433X | 4k-Bit 1-Wire EEPROM |
| DS2433Y | 4k-Bit 1-Wire EEPROM |
| DS2434 | Battery Identification Chip |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS2434 | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類(lèi)型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| DS2434+ | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類(lèi)型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| DS2434-C01 | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類(lèi)型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| DS2434-C02 | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類(lèi)型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| DS2434-C03 | 功能描述:電池管理 RoHS:否 制造商:Texas Instruments 電池類(lèi)型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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