參數(shù)資料
型號: DS1996L-F5
廠商: DALLAS SEMICONDUCTOR
元件分類: Memory IC:Other
英文描述: SPECIALTY MEMORY CIRCUIT, MADB2
封裝: MICRO CAN
文件頁數(shù): 10/18頁
文件大?。?/td> 321K
代理商: DS1996L-F5
DS1996
18 of 18
AC ELECTRICAL CHARACTERISTICS OVERDRIVE SPEED
(-40°C to 70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Time Slot
tSLOT
6
16
s
Write 1 Low Time
tLOW1
1
2
s
Write 0 Low Time
tLOW0
6
16
s
Read Data Valid
tRDV
exactly 2
s
Release Time
tRELEASE
0
1.5
4
s
Read Data Setup
tSU
1
s
5
Recovery Time
tREC
1
s
Reset Time High
tRSTH
48
s
4
Reset Time Low
tRSTL
48
80
s
Presence Detect High
tPDH
2
6
s
Presence Detect Low
tPDL
8
24
s
NOTES:
1. All voltages are referenced to ground.
2. VPUP = external pullup voltage.
3. Input load is to ground.
4. An additional reset or communication sequence cannot begin until the reset high time has expired.
5. Read data setup time refers to the time the host must pull the 1-Wire bus low to read a bit. Data is
guaranteed to be valid within 1
s of this falling edge.
6. Capacitance on the data contact could be 800 pF when power is first applied. If a 5 k
resistor is used
to pullup the data line to VCC, 5 ms after power has been applied, the parasite capacitance will not
affect normal communications.
7. The reset low time (tRSTL) should be restricted to a maximum of 960 s, to allow interrupt signaling,
otherwise, it could mask or conceal interrupt pulses.
8. VIH is a function of the external pullup resistor and the VCC power supply.
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