參數(shù)資料
型號: DS1986-F5
廠商: DALLAS SEMICONDUCTOR
元件分類: Programmable ROM
英文描述: 64K X 1 OTPROM, MADB2
封裝: MICROCAN-2
文件頁數(shù): 20/27頁
文件大?。?/td> 548K
代理商: DS1986-F5
DS1986
27 of 27
AC ELECTRICAL CHARACTERISTICS
OVERDRIVE SPEED
(VPUP =2.8V to 6.0V; -40°C to 70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Time Slot
tSLOT
616
s
Write 1 Low Time
tLOW1
12
s
Write 0 Low Time
tLOW0
616
s
Read Data Valid
tRDV
exactly 2
s
Release Time
tRELEASE
0
1.5
4
s
Read Data Setup
tSU
1
s
5
Recovery Time
tREC
1
s
Reset Time High
tRSTH
48
s
4
Reset Time Low
tRSTL
48
80
s
Presence Detect High
tPDH
26
s
Presence Detect Low
tPDL
824
s
NOTES:
1. All voltages are referenced to ground.
2. VPUP = external pull-up voltage.
3. Input load is to ground.
4. An additional reset or communication sequence cannot begin until the reset high time has expired.
5. Read data setup time refers to the time the host must pull the 1-Wire bus low to read a bit. Data is
guaranteed to be valid within 1
s of this falling edge.
6. VIH is a function of the external pull-up resistor and VPUP .
7. 30 nanocoulombs per 72 time slots @ 5.0V.
8. At VCC =5.0V with a 5 k
pull-up to VCC and a maximum time slot of 120 s.
9. Capacitance on the data pin could be 800 pF when power is first applied. If a 5 k
resistor is used to
pull up the data line to VCC , 5
s after power has been applied the parasite capacitance will not affect
normal communications.
10. Under certain low voltage conditions VILMAX may have to be reduced to as much as 0.5V to
always guarantee a presence pulse.
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