參數(shù)資料
型號(hào): DS18B20Z
廠商: DALLAS SEMICONDUCTOR
元件分類: Switch/Digital Output Temperature Sensor
英文描述: DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 0.50Cel, RECTANGULAR, SURFACE MOUNT
封裝: 0.150 INCH, SOIC-8
文件頁數(shù): 10/20頁
文件大?。?/td> 149K
代理商: DS18B20Z
DS18B20
18 of 20
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to ground
–0.5V to +6.0V
Operating temperature
–55
°C to +125°C
Storage temperature
–55
°C to +125°C
Soldering temperature
See J-STD-020A Specification
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-55°C to +125°C; VDD=3.0V to 5.5V)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS
NOTES
Supply Voltage
VDD
Local Power
+3.0
+5.5
V
1
Parasite Power
+3.0
+5.5
Pullup Supply
Voltage
VPU
Local Power
+3.0
VDD
V
1,2
-10°C to
+85°C
±0.5
°C
3
Thermometer Error
tERR
-55°C to
+125°C
±2
Input Logic Low
VIL
-0.3
+0.8
V
1,4,5
Local Power
+2.2
Input Logic High
VIH
Parasite Power
+3.0
The lower of
5.5
or
VDD + 0.3
V
1, 6
Sink Current
IL
VI/O=0.4V
4.0
mA
1
Standby Current
IDDS
750
1000
nA
7,8
Active Current
IDD
VDD=5V
1
1.5
mA
9
DQ Input Current
IDQ
5
A
10
Drift
±0.2
°C
11
NOTES:
1.
All voltages are referenced to ground.
2.
The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the
high level of the pullup is equal to VPU.
In order to meet the VIH spec of the DS18B20, the actual
supply rail for the strong pullup transistor must include margin for the voltage drop across the
transistor when it is turned on; thus: VPU_ACTUAL = VPU_IDEAL + VTRANSISTOR.
3.
See typical performance curve in Figure 17
4.
Logic low voltages are specified at a sink current of 4 mA.
5.
To guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have to be
reduced to as low as 0.5V.
6.
Logic high voltages are specified at a source current of 1 mA.
7.
Standby current specified up to 70
°C. Standby current typically is 3 A at 125°C.
8.
To minimize IDDS, DQ should be within the following ranges: GND
≤ DQ ≤ GND + 0.3V or V
DD
0.3V
≤ DQ ≤ V
DD.
9.
Active current refers to supply current during active temperature conversions or EEPROM writes.
10. DQ line is high (“hi-Z” state).
11. Drift data is based on a 1000 hour stress test at 125°C with VDD = 5.5V.
相關(guān)PDF資料
PDF描述
DS18B20 DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 0.50Cel, RECTANGULAR, THROUGH HOLE MOUNT
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