參數(shù)資料
型號: DS1822-PAR+T&R
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: Switch/Digital Output Temperature Sensor
英文描述: DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 2Cel, RECTANGULAR, THROUGH HOLE MOUNT
封裝: TO-92, 3 PIN
文件頁數(shù): 9/19頁
文件大?。?/td> 206K
代理商: DS1822-PAR+T&R
DS1822-PAR
17 of 19
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.5V to +6.0V
Operating Temperature Range
-55
°C to +100°C
Storage Temperature Range
-55
°C to +125°C
Solder Dip Temperature
See IPC/JEDEC J-STD-020A Specification
Reflow Oven Temperature
+220°C
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-55°C to +100°C; VPU = 3.0V to 5.5V)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS
NOTES
Pullup Supply
Voltage
VPU
3.0
5.5
V
1, 2
Thermometer Error
tERR
-10°C to +85°C
±2
-55°C to +100°C
±3
°C
3
Input Logic Low
VIL
-0.3
+0.8
V
1, 4, 5
Input Logic High
VIH
3.0
5.5
V
1, 6
Sink Current
IL
VI/O = 0.4V
4.0
mA
1
Active Current
IDQA
1
1.5
mA
7
DQ Input Current
IDQ
5
A
8
Drift
±0.2
°C
9
NOTES:
1. All voltages are referenced to ground.
2. The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is
ideal, and therefore the high level of the pullup is equal to VPU. In order to meet the VIH spec of the
DS1822-PAR, the actual supply rail for the strong pullup transistor must include margin for the
voltage drop across the transistor when it is turned on; thus: VPU_ACTUAL = VPU_IDEAL + VTRANSISTOR.
3. See typical performance curve in Figure 15.
4. Logic low voltages are specified at a sink current of 4mA.
5. To always guarantee a presence pulse under low voltage parasite power conditions, VILMAX may have
to be reduced to as low as 0.5V.
6. Logic high voltages are specified at a source current of 1mA.
7. Active current refers to supply current during active temperature conversions or EEPROM writes.
8. DQ line is high (“high-Z” state).
9. Drift data is based on a 1000 hour stress test at +125°C.
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +100°C; VPU = 3.0V to 5.5V)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS
NV Write Cycle Time
twr
2
10
ms
EEPROM Writes
NEEWR
-55°C to +55°C
50k
writes
EEPROM Data Retention
tEEDR
-55°C to +55°C
10
years
相關PDF資料
PDF描述
DS1822-PAR/T&R DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 2Cel, RECTANGULAR, THROUGH HOLE MOUNT
DS1822-PAR DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 0.20Cel, ROUND, THROUGH HOLE MOUNT
DS1822Z/T&R DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 2Cel, RECTANGULAR, SURFACE MOUNT
DS1822/T&R DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 2Cel, RECTANGULAR, THROUGH HOLE MOUNT
DS1822 DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 2Cel, RECTANGULAR, THROUGH HOLE MOUNT
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