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參數(shù)資料
| 型號： | DS1330Y |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 256K Nonvolatile SRAM with Battery Monitor(帶電池監(jiān)控的3.3V 256K非易失性SRAM) |
| 中文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 114K |
| 代理商： | DS1330Y |
DS1330Y/AB
256K Nonvolatile SRAM
with Battery Monitor
DS1330Y/AB
042398 1/11
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Power supply monitor resets processor when V
CC
power loss occurs and holds processor in reset during
V
CC
ramp–up
Battery monitor checks remaining capacity daily
Read and write access times as fast as 70 ns
Unlimited write cycle endurance
Typical standby current 50
μ
A
Upgrade for 32K x 8 SRAM, EEPROM or Flash
Lithium battery is electrically disconnected to retain
freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1330Y) or
optional
±
5% V
CC
operating range (DS1330AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
New PowerCap Module (PCM) package
– Directly surface–mountable module
– Replaceable snap–on PowerCap provides lith-
ium backup battery
– Standardized pinout for all nonvolatile SRAM
products
– Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
BW
NC
NC
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
WE
RST
V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34(USES DS9034PC POWERCAP)
GND
V
BAT
PIN DESCRIPTION
A0–A14
DQ0–DQ7
CE
WE
OE
RST
BW
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Reset Output
– Battery Warning Output
– Power (+5 Volts)
– Ground
– No Connect
DESCRIPTION
The DS1330 256K Nonvolatile SRAMs are 262,144–bit,
fully static, nonvolatile SRAMs organized as 32,768
words by eight bits. Each NV SRAM has a self–con-
tained lithium energy source and control circuitry which
constantly monitors V
CC
for an out–of–tolerance condi-
tion. When such a condition occurs, the lithium energy
source is automatically switched on and write protection
is unconditionally enabled to prevent data corruption.
Additionally, the DS1330 devices have dedicated cir-
cuitry for monitoring the status of V
CC
and the status of
the internal lithium battery. DS1330 devices in the Pow-
erCap Module package are directly surface mountable
and are normally paired with a DS9034PC PowerCap to
form a complete Nonvolatile SRAM module. The
devices can be used in place of 32K x 8 SRAM,
EEPROM or Flash components.
相關PDF資料 |
PDF描述 |
|---|---|
| DS1330AB | 256K Nonvolatile SRAM with Battery Monitor(帶電池監(jiān)控的3.3V 256K非易失性SRAM) |
| DS1336 | Afterburner Chip(補燃器芯片) |
| DS1340 | I2C RTC with Trickle Charger |
| DS1340C-18 | I2C RTC with Trickle Charger |
| DS1340C-3 | I2C RTC with Trickle Charger |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DS1330Y/AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330Y_10 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330Y-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1330YL | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256K Nonvolatile SRAM with Battery Monitor |
| DS1330YL-100 | 功能描述:IC NVSRAM 256KBIT 100NS 34LPM RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF) |
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