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參數(shù)資料
| 型號： | DS1330AB |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | DRAM |
| 英文描述： | 256K Nonvolatile SRAM with Battery Monitor(帶電池監(jiān)控的3.3V 256K非易失性SRAM) |
| 中文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 114K |
| 代理商： | DS1330AB |
DS1330Y/AB
256K Nonvolatile SRAM
with Battery Monitor
DS1330Y/AB
042398 1/11
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Power supply monitor resets processor when V
CC
power loss occurs and holds processor in reset during
V
CC
ramp–up
Battery monitor checks remaining capacity daily
Read and write access times as fast as 70 ns
Unlimited write cycle endurance
Typical standby current 50
μ
A
Upgrade for 32K x 8 SRAM, EEPROM or Flash
Lithium battery is electrically disconnected to retain
freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1330Y) or
optional
±
5% V
CC
operating range (DS1330AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
New PowerCap Module (PCM) package
– Directly surface–mountable module
– Replaceable snap–on PowerCap provides lith-
ium backup battery
– Standardized pinout for all nonvolatile SRAM
products
– Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
BW
NC
NC
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
WE
RST
V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34(USES DS9034PC POWERCAP)
GND
V
BAT
PIN DESCRIPTION
A0–A14
DQ0–DQ7
CE
WE
OE
RST
BW
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Reset Output
– Battery Warning Output
– Power (+5 Volts)
– Ground
– No Connect
DESCRIPTION
The DS1330 256K Nonvolatile SRAMs are 262,144–bit,
fully static, nonvolatile SRAMs organized as 32,768
words by eight bits. Each NV SRAM has a self–con-
tained lithium energy source and control circuitry which
constantly monitors V
CC
for an out–of–tolerance condi-
tion. When such a condition occurs, the lithium energy
source is automatically switched on and write protection
is unconditionally enabled to prevent data corruption.
Additionally, the DS1330 devices have dedicated cir-
cuitry for monitoring the status of V
CC
and the status of
the internal lithium battery. DS1330 devices in the Pow-
erCap Module package are directly surface mountable
and are normally paired with a DS9034PC PowerCap to
form a complete Nonvolatile SRAM module. The
devices can be used in place of 32K x 8 SRAM,
EEPROM or Flash components.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1330ABL-100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABL-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABL-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABL-70-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1330ABP-100 | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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