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參數(shù)資料
| 型號(hào)： | DS1230Y |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256K Nonvolatile SRAM(256K 非易失性靜態(tài)RAM) |
| 中文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA28 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 120K |
| 代理商： | DS1230Y |
DS1230Y/AB
256K Nonvolatile SRAM
DS1230Y/AB
042398 1/12
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Replaces 32K x 8 volatile static RAM, EEPROM or
Flash memory
Unlimited write cycles
Low–power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1230Y)
Optional
±
5% V
CC
operating range (DS1230AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
JEDEC standard 28–pin DIP package
New PowerCap Module (PCM) package
– Directly surface–mountable module
– Replaceable snap–on PowerCap provides lith-
ium backup battery
– Standardized pinout for all nonvolatile SRAM
products
– Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
DQ7
DQ5
DQ4
DQ1
CE
V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
34
31
30
27
26
23
20
NC
A13
A10
A9
A8
A5
A2
NC
NC
GND
V
BAT
34–PIN POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
V
CC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
28–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
PIN DESCRIPTION
A0 – A14
DQ0 – DQ7
CE
WE
OE
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
– No Connect
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1230AB | 256K NV SRAM(256K非易失性SRAM) |
| DS1231 | Power Monitor Chip(電源監(jiān)控芯片) |
| DS1231S | Power Monitor Chip(電源監(jiān)控芯片) |
| DS1232LP(中文) | Low Power MicroMonitor Chip(低功耗微監(jiān)控芯片) |
| DS1232LPS(中文) | Low Power MicroMonitor Chip(低功耗微監(jiān)控芯片) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1230Y/AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256K Nonvolatile SRAM |
| DS1230Y_10 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230Y-100 | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230Y-100+ | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類(lèi)型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1230Y-100IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
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