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參數(shù)資料
| 型號： | DS1220Y |
| 英文描述： | 16k Nonvolatile SRAM |
| 中文描述： | 16K非易失SRAM |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 164K |
| 代理商： | DS1220Y |
DS1220Y
6 of 8
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
PARAMETER
CE at V
IH
before Power-Down
V
CC
Slew from V
TP
to 0V
V
CC
Slew from 0V to V
TP
CE at V
IH
after Power-Up
SYMBOL
t
PD
t
F
t
R
t
REC
MIN
0
100
0
MAX
UNITS
μ
s
μ
s
μ
s
ms
(T
A
= 25
°
C)
UNITS
years
NOTES
11
2
PARAMETER
Expected Data Retention Time
SYMBOL
t
DR
MIN
10
MAX
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WEis high for a read cycle.
2.
OE= V
IH
or V
IL
. If OE = V
IH
during a write cycle, the output buffers remain in a high impedance
state.
3.
t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE orWE
going low to the earlier of CEor WE going high.
4.
t
DS
are measured from the earlier of CE or WE going high.
5.
These parameters are sampled with a 5 pF load and are not 100% tested.
6.
If the CE low transition occurs simultaneously with or later than the WE low transition in write
cycle 1, the output buffers remain in a high impedance state during this period.
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220Y-100 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220Y-100+ | 制造商:Maxim Integrated Products 功能描述:NVRAM NVSRAM PARALLEL 16KBIT 5V - Rail/Tube |
| DS1220Y-100-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1220Y-100IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-120 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
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