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參數(shù)資料
| 型號： | DS1220Y-150 |
| 廠商： | DALLAS SEMICONDUCTOR |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 |
| 封裝： | 0.720 INCH, EXTENDED, DIP-24 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 144K |
| 代理商： | DS1220Y-150 |
DS1220Y
6 of 8
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
CE at VIH before Power-Down
tPD
0
s
11
VCC Slew from VTP to 0V
tF
100
s
VCC Slew from 0V to VTP
tR
0
s
CE at VIH after Power-Up
tREC
2ms
(TA = 25
°C)
PARAMETER
SYMBOL
MIN
MAX
UNITS
NOTES
Expected Data Retention Time
tDR
10
years
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
WE is high for a read cycle.
2. OE = VIH or VIL . If OE = VIH during a write cycle, the output buffers remain in a high impedance
state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. tDS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition in write
cycle 1, the output buffers remain in a high impedance state during this period.
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PDF描述 |
|---|---|
| DS1220Y | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
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| DS1225AB-170 | 8K X 8 NON-VOLATILE SRAM MODULE, 170 ns, DMA28 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220Y-150+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-150-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
| DS1220Y-200 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-200+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220Y-200-IND | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NVRAM (Battery Based) |
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