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參數(shù)資料
| 型號(hào)： | DS1220AD-200 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| 封裝： | 0.720 INCH, PLASTIC, DIP-24 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大小： | 158K |
| 代理商： | DS1220AD-200 |
DS1220AB/AD
8 of 10
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until
VCC is first applied by the user. The expected tDR is defined as accumulative time in the absence of
VCC starting from the time power is first applied by the user. This parameter is guaranteed by design
and is not 100% tested.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power down condition the voltage on any pin may not exceed the voltage on VCC.
12. tWR1 , tDH1 are measured from WE going high.
13. tWR2 , tDH2 are measured from CE going high.
14. DS1220 modules are recognized by Underwriters Laboratory (U.L.
) under file E99151.
DC TEST CONDITIONS
Outputs Open
Cycle = 200ns for Operating Current
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
PART NUMBER
TEMPERATURE
RANGE
SUPPLY
TOLERANCE
PIN/PACKAGE
SPEED
GRADE
DS1220AB-100
0°C to +70°C
5V
± 5%
24 / 720 EMOD
100ns
DS1220AB-100+
0°C to +70°C
5V
± 5%
24 / 720 EMOD
100ns
DS1220AB-100IND
-40°C to +85°C
5V
± 5%
24 / 720 EMOD
100ns
DS1220AB-100IND+
-40°C to +85°C
5V
± 5%
24 / 720 EMOD
100ns
DS1220AB-120
0°C to +70°C
5V
± 5%
24 / 720 EMOD
120ns
DS1220AB-120+
0°C to +70°C
5V
± 5%
24 / 720 EMOD
120ns
DS1220AB-150
0°C to +70°C
5V
± 5%
24 / 720 EMOD
150ns
DS1220AB-150+
0°C to +70°C
5V
± 5%
24 / 720 EMOD
150ns
DS1220AB-200
0°C to +70°C
5V
± 5%
24 / 720 EMOD
200ns
DS1220AB-200+
0°C to +70°C
5V
± 5%
24 / 720 EMOD
200ns
DS1220AB-200IND
-40°C to +85°C
5V
± 5%
24 / 720 EMOD
200ns
DS1220AB-200IND+
-40°C to +85°C
5V
± 5%
24 / 720 EMOD
200ns
DS1220AD-100
0°C to +70°C
5V
± 10%
24 / 720 EMOD
100ns
DS1220AD-100+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
100ns
DS1220AD-100IND
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
100ns
DS1220AD-100IND+
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
100ns
DS1220AD-120
0°C to +70°C
5V
± 10%
24 / 720 EMOD
120ns
DS1220AD-120+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
120ns
DS1220AD-150
0°C to +70°C
5V
± 10%
24 / 720 EMOD
150ns
DS1220AD-150+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
150ns
DS1220AD-200
0°C to +70°C
5V
± 10%
24 / 720 EMOD
200ns
DS1220AD-200+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
200ns
DS1220AD-200IND
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
200ns
DS1220AD-200IND+
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
200ns
+ Denotes lead-free/RoHS-compliant product.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220AD-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA24 |
| DS1220AB-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220AB | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220Y-120 | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220AD-200+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-200IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-200-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD-200IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-85 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
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