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參數(shù)資料
| 型號(hào)： | DS1220AD-200 |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| 封裝： | 0.720 INCH, PLASTIC, DIP-24 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 158K |
| 代理商： | DS1220AD-200 |
DS1220AB/AD
3 of 10
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +6.0V
Operating Temperature
0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature
+260°C for 10 seconds
Caution: Do Not Reflow
(Wave or Hand Solder Only)
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1220AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1220AD Power Supply Voltage
VCC
4.50
5.0
5.50
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
+0.8
V
(TA: See Note 10)
(VCC =5V ± 5% for DS1220AB)
DC ELECTRICAL CHARACTERISTICS
(VCC =5V ± 10% for DS1220AD)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
μA
I/O Leakage Current
CE
≥ V
IH ≤ VCC
IIO
-1.0
+1.0
μA
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE = 2.2V
ICCS1
5.0
10.0
mA
Standby Current CE = VCC-0.5V
ICCS2
3.0
5.0
mA
Operating Current
(Commercial)
ICC01
75
mA
Operating Current
(Industrial)
ICCO1
85
mA
Write Protection Voltage
(DS1220AB)
VTP
4.5
4.62
4.75
V
Write Protection Voltage
(DS1220AD)
VTP
4.25
4.37
4.5
V
CAPACITANCE
(TA =25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
5
10
pF
Input/Output Capacitance
CI/O
5
12
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1220AD-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA24 |
| DS1220AB-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220AB | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220Y-120 | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1220AD-200+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-200IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-200-IND | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD-200IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| DS1220AD-85 | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
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