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參數(shù)資料
| 型號： | DS1200S |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDSO16 |
| 封裝： | 0.300 INCH, SOIC-16 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 272K |
| 代理商： | DS1200S |
DS1200
7 of 7
AC ELECTRICAL CHARACTERISTICS
(0C to +70C; VCC = 5V ± 10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Data to CLK Setup
tDC
35
ns
3, 9
Data to CLK Hold
tCDH
40
ns
3, 9
Data to CLK Delay
tCDD
125
ns
3, 4, 6, 9
CLK Low Time
tCL
125
ns
3, 9
CLK High Time
tCH
125
ns
3, 9
CLK Frequency
fCLK
DC
4.0
MHz
3, 9
CLK Rise and Fall
tR, tF
500
ns
9
RST
to Clock Setup
tCC
1
s
3, 9
CLK to RST Hold
tCCH
40
ns
3, 9
RST
Inactive Time
tCWH
125
ns
3, 9, 14
RST
to I/O High-Z
tCDZ
50
ns
3, 9
NOTES:
1) All voltages and resistances are referenced to ground.
2) Input levels apply to CLK, DQ, and RST while VCC is not connected to the tag, then RST input
reverts to VIHE.
3) Measured at VIH = 2.0 or VIL = 0.8V and 10ns maximum rise and fall time.
4) Measured at VOH = 2.4V and VOL = 0.4V.
5) For CLK, DQ, RST , and VCC at 5V.
6) Load capacitance = 50pF.
7) Applies to RST when VCC < 3.8V.
8) Measured with outputs open.
9) Measured at VIH of RST greater than or equal to 3.8V when RST supplies power.
10) Logic 1 maximum is VCC + 0.3V if the VCC pin supplies power and RST +0.3V if the RST pin
supplies power.
11) RST logic 1 maximum is VCC + 0.3V if the VCC pin supplies power and 5.5V maximum if RST
supplies power.
12) Each DS1200 is marked with a four-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected tDR is defined as starting at the date of
manufacture.
13) Average AC RST current can be determined using the following formula:
ITOTAL = 2 + ILOAD DC + (4 x 10
-3)(CL + 140)f
ITOTAL and ILOAD are in mA; CL is in pF; f is in MHz.
Applying the above formula, a load capacitance of 50pF running at a frequency of 4.0MHz gives an
ITOTAL current of 5mA.
14) When RST is supplying power, tCWH must be increased to 100ms.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1200 | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDIP10 |
| DS1211SN | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
| DS1211S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211N | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1200S+ | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS1200S+C02 | 制造商:Maxim Integrated Products 功能描述:ELEC TAG -16P SOIC LEAD FREE - Rail/Tube |
| DS1200S+T&R | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS1200SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NOVRAM|128X8|CMOS|SOP|16PIN|PLASTIC |
| DS1201 | 功能描述:IC SRAM 1KBIT 100NS 5SIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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