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參數(shù)資料
| 型號： | DS1200S |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | Static RAM |
| 英文描述： | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDSO16 |
| 封裝： | 0.300 INCH, SOIC-16 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 272K |
| 代理商： | DS1200S |
DS1200
2 of 7
Figure 1. ELECTRONIC TAG BLOCK DIAGRAM
Figure 2. ADDRESS/COMMAND
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
B
0
A6 A5 A4 A3 A2 A1 A0
R
W
R
W
R
W
R
W
R
W
R
W
R
W
R
W
OPERATION
The block diagram (Figure 1) illustrates the main elements of the device: shift register, control logic,
NV RAM, and power switch. To initiate a memory cycle, RST is taken high and 24 bits are loaded into
the shift register, providing both address and command information. Each bit is input serially on the
rising edge of the CLK input. Seven address bits specify one of the 128 RAM locations. The remaining
command bits specify read/write and byte/burst mode. After the first 24 clocks, which load the shift
register, additional clocks will output data for a read or input data for a write. The number of clock pulses
equal 24 plus 8 for byte mode or 24 plus 1024 for burst mode.
For hardwired applications, active power is supplied by the VCC pin. Alternatively, for user-insertable
applications, power can be supplied by the RST pin.
B-BURST
BYTE 3
BYTE 2
BYTE 1
R-READ
W-WRITE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DS1200 | 128 X 8 NON-VOLATILE SRAM, 125 ns, PDIP10 |
| DS1211SN | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
| DS1211S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO20 |
| DS1211N | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP20 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1200S+ | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS1200S+C02 | 制造商:Maxim Integrated Products 功能描述:ELEC TAG -16P SOIC LEAD FREE - Rail/Tube |
| DS1200S+T&R | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| DS1200SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NOVRAM|128X8|CMOS|SOP|16PIN|PLASTIC |
| DS1201 | 功能描述:IC SRAM 1KBIT 100NS 5SIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
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