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參數(shù)資料
| 型號： | DS_K6F8016U6B |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 為512k x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 157K |
| 代理商： | DS_K6F8016U6B |
K6F8016U6B Family
Revision 1.0
September 2001
1
CMOS SRAM
Document Title
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
1.0
Remark
Preliminary
Final
History
Initial draft
Finalize
- I
CC2
change : 30mA to 28mA for 55ns product
25mA to 22mA for 70ns product
Draft Date
July 24, 2001
September 27, 2001
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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