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參數(shù)資料
| 型號(hào)： | DS_K6F2016U4E |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 128K的x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | DS_K6F2016U4E |
CMOS SRAM
K6F2016U4E Family
- 1 -
Revision 2.0
September 2001
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Document Title
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
1.0
2.0
Remark
Preliminary
Final
Final
History
Initial Draft
Finalize
- Change I
CC2
from 21 to 26mA for 55ns product.
- Change I
CC2
from 17 to 20mA for 70ns product.
- Remove "A1 Index Mark" of 48-TBGA package bottom side
Revise
- Changed 48-TBGA vertical dimension
E1(Typical) 0.55mm to 0.58mm
E2(Typical) 0.35mm to 0.32mm
Draft Date
February 21, 2001
April 30, 2001
September 27, 2001
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