參數(shù)資料
型號: DMA2286
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
元件分類: 消費家電
英文描述: DMA 2275, DMA 2286 C/D/D2-MAC Descrambler
中文描述: SPECIALTY CONSUMER CIRCUIT, PQCC68
封裝: PLASTIC, LCC-68
文件頁數(shù): 42/48頁
文件大?。?/td> 217K
代理商: DMA2286
DMA 2275, DMA 2286
42
9.6.5. Acquisition DRAM Interface Characteristics
at T
A
= 0 to 65
°
C, V
SUP
= 4.75 to 5.25 V, f
Φ
M
= 20.25 MHz
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
V
DIL
RAM Data Input Low Voltage
50
0.8
V
V
DIH
RAM Data Input High Voltage
2.0
V
V
DOL
RAM Data Output Low Voltage
0.4
V
I
DO
= 1.6 mA
V
DOH
RAM Data Output High Voltage
2.4
V
–I
DO
= 0.1 mA
t
DT
RAM Data Output
Transition Time
3
10
ns
C
L
= 10 pF
t
DIS
RAM Data Input Setup Time
before CAS Output High
50, 49,
57
50
ns
t
DIH
RAM Data Input Hold Time
after CAS Output High
25
45
ns
t
DHR
RAM Data Output Hold Time
after RAS Output Low
250
ns
t
DS
RAM Data Output Setup Time
before CAS Output Low
40
ns
t
DH
RAM Data Output Hold Time
after CAS Output Low
130
ns
V
AOL
RAM Address Output
Low Voltage
51 to 55,
58 to 60
0.4
V
I
AO
= 1.6 mA
V
AOH
RAM Address Output
High Voltage
2.4
V
–I
AO
= 0.1 mA
t
AT
RAM Address Output
Transition Time
3
10
ns
C
L
= 10 pF
t
RAH
Row Address Output Hold Time
after RAS Output Low
51 to 55,
58 to 60,
49 57
49, 57
60
ns
t
ASR
Row Address Output Setup
Time before RAS Output Low
100
ns
t
AR
Column Address Output Hold
Time after RAS Output Low
80
ns
t
CAH
Column Address Output Hold
Time after CAS Output Low
50
ns
t
ASC
Column Address Output Setup
Time before CAS Output Low
20
ns
V
RASOL
RAS Output Low Voltage
57
0.4
V
I
RASO
= 1.6 mA
V
RASOH
RAS Output High Voltage
2.4
V
–I
RASO
= 0.1 mA
t
RAST
RAS Output Transition Time
3
10
ns
C
L
= 10 pF
t
RAS
RAS Output Low Pulsewidth
1600
ns
t
RP
RAS Output Precharge Time
100
ns
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