參數(shù)資料
型號(hào): DG3409DB-T2-E1
廠商: Vishay Siliconix
文件頁(yè)數(shù): 12/15頁(yè)
文件大?。?/td> 0K
描述: IC MUX LV 8CH DUAL 4CH 16MICRO
標(biāo)準(zhǔn)包裝: 3,000
功能: 多路復(fù)用器
電路: 2 x 4:1
導(dǎo)通狀態(tài)電阻: 7 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 2.7 V ~ 12 V,± 3 V ~ 6 V
電流 - 電源: 1µA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-WFBGA
供應(yīng)商設(shè)備封裝: 16-Micro Foot?
包裝: 帶卷 (TR)
www.vishay.com
6
Document Number: 72858
S11-0303-Rev. E, 28-Feb-11
Vishay Siliconix
DG3408, DG3409
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Product is End of Life
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g.
ΔRDON = RDON Max - RDON Min.
h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.
i. RDON flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (Single Supply 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %
, V- = 0 V
VEN = 0.4 V or 1.8 V
f
Temp.b
Limits
- 40 °C to 85 °C
Unit
Min.c
Typ.d
Max.c
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
3
V
On-Resistance
RON
V+ = 2.7 V, VD = 0.5 or 2.2 V, IS = 5 mA
Room
Full
12
25.5
26.5
Ω
RON Match Between
Channelsg
ΔRON
V+ = ± 2.7 V, VD = 0.5 V or 2.2 V, IS = 5 mA
Room
3.6
On-Resistance Flatnessi
RON
Flatness
Room
13
Switch Off Leakage Currenta
IS(off)
V+ = 3.3 V
VS = 2 or 1 V, VD = 1 or 2 V
Room
Full
- 2
- 20
2
20
nA
ID(off)
Room
Full
- 2
- 20
2
20
Channel On Leakage Currenta
ID(on)
V+ = 3.3 V
VD = VS = 1 or 2 V, sequence each switch on
Room
Full
- 2
- 20
2
20
Digital Control
Logic High Input Voltage
VINH
Full
1.8
V
Logic Low Input Voltage
VINL
Full
0.4
Input Currenta
IIN
VAX = VEN = 1.8 V or 0.4 V
Full
- 1
1
A
Dynamic Characteristics
Transition Time
tTRANS
VS1 = 1.5 V, VS8 = 0 V, (DG3408)
VS1b = 1.5 V, VS4b = 0 V, (DG3409)
see figure 2
Room
Full
140
165
182
ns
Break-Before-Make Time
tBBM
VS(all) = VDA = 1.5 V
see figure 4
Room
Full
263
Enable Turn-On Time
tON(EN)
VAX = 0 V, VS1 = 1.5 V (DG3408)
VAX = 0 V, VS1b = 1.5 V (DG3409)
see figure 3
Room
Full
140
162
178
Enable Turn-Off Time
tOFF(EN)
Room
Full
76
97
104
Charge Injectione
Q
CL = 1 nF, RGEN = 0, VGEN = 0 V
Room
7
pC
Off Isolatione, h
OIRR
f = 100 kHz, RL = 1 kΩ
Room
- 81
dB
Crosstalke
XTALK
Room
- 85
Source Off Capacitancee
CS(off)
f = 1 MHz, VS = 0 V, VEN = 1.8 V
DG3408
Room
23
pF
DG3409
Room
25
Drain Off Capacitancee
CD(off)
f = 1 MHz, VD = 0 V, VEN = 1.8 V
DG3408
Room
230
DG3409
Room
120
Drain On Capacitancee
CD(on)
f = 1 MHz, VD = 0 V, VEN = 0 V
DG3408
Room
256
DG3409
Room
147
Power Supplies
Power Supply Current
I+
VEN = VA = 0 V or V+
Room
1
A
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