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參數(shù)資料
| 型號(hào)： | DG221DY-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 多路復(fù)用及模擬開(kāi)關(guān) |
| 英文描述： | QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO16 |
| 封裝： | SOIC-16 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | DG221DY-T1 |
DG221
2
Siliconix
S-52881—Rev. C, 28-Apr-97
Absolute Maximum Ratings
Voltages Referenced to V–
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . .
Continuous Current (Any Terminal)
Continuous Current, S or D
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D (Pulsed 1 ms, 10% duty cycle)
Storage Temperature:
(AK Suffix)
(CJ and DY Suffix)
44 V
25 V
(V–) –2 V to (V+) +2 V
or 20 mA, whichever occurs first
. . . . . . . . . . . . . . . . . . . . .
30 mA
20 mA
70 mA
. . . . . . . . .
–65 to 150 C
–65 to 125 C
. . . . . .
. . . . . . . . . . . .
Power Dissipation (Package)
b
16-Pin CerDIP
c
16-Pin Plastic DIP
d
16-Pin SOIC
e
900 mW
470 mW
600 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped
by internal diodes. Limit forward diode current to maximum
current ratings.
All leads welded or soldered to PC Board.
Derate 12 mW/ C above 75 C
Derate 6.5 mW/ C above 25 C
Derate 7.7 mW/ C above 75 C
b.
c.
d.
e.
Schematic Diagram (Typical Channel)
Figure 1.
S
D
V–
V+
Latch
5 V
Reg
V+
GND
IN
X
WR
V–
Level
Shift/
Drive
–
+
V+
–
+
V–
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