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參數(shù)資料
| 型號(hào)： | DF3A6.8FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對靜電放電（ESD）保護(hù)。 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 150K |
| 代理商： | DF3A6.8FV |
DF3A6.8FV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30kV
Criterion: No damage to device elements
Marking
Equivalent Circuit
(top view)
CT - VR
10
100
0
2
4
6
8
Ta=25°C
f=1MHz
T
REVERSE VOLTAGE VR (V)
6.8
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| DF3A6.8LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6 | DIODES (DIODES FOR PROTECTING AGAINST ESD) |
| DF3A8.2FE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF5A3.3JE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A8.2FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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