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參數(shù)資料
| 型號： | DF3A6.8FV |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產品使用，但對靜電放電（ESD）保護。 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 150K |
| 代理商： | DF3A6.8FV |
DF3A6.8FV
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.8FV
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
*
150
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*
: Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6 mmt)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
=
5 mA
6.4
6.8
7.2
V
Dynamic impedance
Z
Z
I
Z
=
5 mA
25
Ω
Reverse current
I
R
V
R
=
5 V
0.5
μ
A
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
= 0, f = 1MHz
―
45
―
pF
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1Q1B
Weight: 0.0015 g (typ.)
0.5mm
0.45mm
0.45mm
0.4mm
1
2
3
1.CATHODE1
2.CATHODE2
3.ANODE
VESM
1.2±0.05
0.8±0.05
0
0
1
0
0
0
0
0
相關PDF資料 |
PDF描述 |
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| DF3A6.8LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6 | DIODES (DIODES FOR PROTECTING AGAINST ESD) |
| DF3A8.2FE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.10 to 2.40; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF5A3.3JE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.30 to 2.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A8.2FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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