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參數(shù)資料
| 型號： | DF3A5.6LFE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對靜電放電（ESD）保護。 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 143K |
| 代理商： | DF3A5.6LFE |
DF3A5.6LFE
2007-11-01
1
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
DF3A5.6LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
z
Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting cost.
z
Low terminal capacitance: C
T
= 8.0 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
―
I
Z
= 5mA
5.3
5.6
6.0
V
Dynamic impedance
Z
Z
―
I
Z
= 5mA
―
―
50
Reverse current
I
R
―
V
R
=3.5V
―
―
1.0
μ
A
Terminal capacitance
(between Cathode and Anode)
C
T
―
V
R
=
0 V, f
=
1 MHz
―
8
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
8kV
Judgment contents: No element destruction
Unit: mm
JEDEC
JEITA
TOSHIBA
1-2SA1A
Weight: 2.3 mg (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DF3A5.6LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6.2FU | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6.2FV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6.2LFE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6.2LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
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