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參數(shù)資料
| 型號(hào)： | DF3A6.2LFE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| 中文描述： | 產(chǎn)品使用，但對(duì)靜電放電（ESD）保護(hù)。 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 150K |
| 代理商： | DF3A6.2LFE |
DF3A6.2LFE
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF3A6.2LFE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Low Terminal capacitance: C
T
= 6.5 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Power dissipation
P
100
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
I
Z
=
5 mA
5.9
6.2
6.5
V
Dynamic impedance
Z
Z
I
Z
=
5 mA
50
Ω
Reverse current
I
R
V
R
=
5 V
2.5
μ
A
Terminal capacitance
(between Cathode and Anode)
C
T
V
R
=
0 V, f
=
1 MHz
6.5
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
8kV
Criterion: No damage to device elements
Unit: mm
JEDEC
JEITA
TOSHIBA
1-2SA1A
Weight: 0.0023 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DF3A6.2LFV | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF3A6.8FE | DIODE ZENER SINGLE 500mW 3Vz 5mA-Izt 0.05 10uA-Ir 1 PowerDI-323 3K/REEL |
| DF3A6.8FU | DIODES (DIODES FOR PROTECTING AGAINST ESD) |
| DF3A6.8LFU | TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type |
| DF3A68FU | DIODE ZENER SINGLE 500mW 4.7Vz 5mA-Izt 0.05 3uA-Ir 2 PowerDI-323 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DF3A68FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODES (DIODES FOR PROTECTING AGAINST ESD) |
| DF3A68FUT1G | 制造商:ON Semiconductor 功能描述: |
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| DF3A-6EP-2C | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
| DF3A-6EP-2DS | 制造商:HRS 制造商全稱:HRS 功能描述:2mm Pitch Connector for Discrete Wire Connection(Product approved by UL CSA Standard) |
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