參數(shù)資料
型號: DF3A3.6FV
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
中文描述: 產(chǎn)品使用,但對靜電放電(ESD)保護。
文件頁數(shù): 2/3頁
文件大?。?/td> 136K
代理商: DF3A3.6FV
DF3A3.6FV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
±
30 kV
Criterion: No damage to device elements
Marking
Equivalent Circuit
(top view)
IZ - VZ
0
0
0
1
10
100
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
0.001
Ta=25°C
ZENER VOLTAGE VZ (V)
Z
CT - VR
10
100
1000
0
1
2
3
4
5
Ta=25°C
f=1MHz
T
REVERSE VOLTAGE VR (V)
3.6
相關(guān)PDF資料
PDF描述
DF3A5.6FE Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.34 to 14.98; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF3A5.6FU Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF3A5.6FV Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF3A5.6LFE Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
DF3A5.6LFV Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
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