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參數(shù)資料
| 型號(hào)： | DF2S12S |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
| 中文描述： | 產(chǎn)品使用，但對(duì)靜電放電（ESD）保護(hù)。 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 167K |
| 代理商： | DF2S12S |
DF2S12S
2007-11-01
2
Marking Equivalent Circuit
(Top View)
ZENER VOLTAGE VZ (V)
Z
REVERSE VOLTAGE VR (V)
T
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DF3A6.2FE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S16FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S16S | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.77 to 10.21; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S24FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.11 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S5.6FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DF2S16FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |
| DF2S16FS(TL3,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| DF2S16FS(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:Diode,ESD Pro,Vz=16V,Ir(max)=0.5#?A,fSC |
| DF2S16S | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |
| DF2S20FS(TL3,T) | 制造商:Toshiba America Electronic Components 功能描述: |
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