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參數(shù)資料
| 型號： | DF2S12S |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
| 中文描述： | 產(chǎn)品使用，但對靜電放電（ESD）保護。 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 167K |
| 代理商： | DF2S12S |
DF2S12S
2007-11-01
1
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S12S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z
2terminal ultra small package suitable for mounting on small space.
z
Low total capacitance: C
T
= 15 pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P
*
150
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*
: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Zener voltage
V
Z
―
I
Z
= 5 mA
11.4
12.0
12.6
V
Dynamic impedance
Z
Z
―
I
Z
= 5 mA
―
―
25
Ω
Reverse current
I
R
―
V
R
=9 V
―
―
0.05
μ
A
Total capacitance
C
T
―
V
R
= 0 V, f = 1 MHz
―
15
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
±
20 kV
Criterion: No damage to device elements
Unit: mm
C
JEDEC
JEITA
TOSHIBA
1-1K1A
Weight: 0.001 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
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| DF3A6.2FE | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S16FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S16S | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.77 to 10.21; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S24FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.11 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
| DF2S5.6FS | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DF2S16FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |
| DF2S16FS(TL3,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| DF2S16FS(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:Diode,ESD Pro,Vz=16V,Ir(max)=0.5#?A,fSC |
| DF2S16S | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Product for Use Only as Protection against Electrostatic Discharge (ESD). |
| DF2S20FS(TL3,T) | 制造商:Toshiba America Electronic Components 功能描述: |
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