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參數(shù)資料
| 型號： | DDTA113ZE-DIE |
| 廠商： | Diodes Inc. |
| 英文描述： | 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS |
| 中文描述： | 100mA的雙互補(bǔ)預(yù)偏置三極管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 1063K |
| 代理商： | DDTA113ZE-DIE |
DS30761 Rev. 4 - 2
4 of 7
DCX100NS
www.diodes.com
10
I , COLLECTOR CURRENT (mA)
C
Fig. 13 DC Current Gain
1
100
h
, DC CURRENT GAIN
FE
0
0.1
50
100
150
200
250
300
1000
V
= 5V
CE
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
Fig.12 V
vs I
CE
C
C
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
0.4
0.8
1.2
1.6
2
I = 0.25mA
b
I = 1.25mA
b
I = 0.5mA
b
I = 0.75mA
b
I = 1.5mA
b
I = 1.75mA
b
I = 2mA
b
I = 1mA
b
V
, COLLECTOR EMITTER
CE(SAT)
VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 14 V
vs I
CE(SAT)
C
0.01
0.1
1
10
100
0.1
1
10
100
1000
Ic/Ib=20
T = 150
°
C
A
T = 125
°
C
A
T = 85
°
C
A
T = 25
°
C
A
T = -55
°
C
A
Characteristics Curves of NPN Transistor (Q2)
@ T
amb
= 25
°
C unless otherwise specified
C
U
D
O
R
P
W
E
N
15
I , COLLECTOR CURRENT (mA)
C
Fig. 10 V
vs I
BE(SAT)
C
V
, BASE EMITTER VOLTAGE (V)
BE(SAT)
9
0.1
10
100
0
3
6
12
1
I /I = 10
C B
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = -55°C
A
10
I , COLLECTOR CURRENT (mA)
C
Fig. 11 V
vs I
BE(SAT)
C
V
, BASE EMITTER VOLTAGE (V)
BE(SAT)
0.1
0
1
5
1
100
2
3
4
6
7
8
Ic/Ib=20
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
V
, COLLECTOR EMITTER
CE(SAT)
VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 15 V
vs I
CE(SAT)
C
0.01
0.1
1
10
100
0.1
1
10
100
1000
Ic/Ib=20
T = -55
°
C
A
T = 25
°
C
A
T = 85
°
C
A
T = 125
°
C
A
T = 150
°
C
A
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相關(guān)代理商/技術(shù)參數(shù) |
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| DDTA113ZKA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR |
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| DDTA113ZKA_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DDTA113ZKA-7 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 1KW 10KW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTA113ZKA-7-F | 功能描述:開關(guān)晶體管 - 偏壓電阻器 200MW 1K 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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