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參數(shù)資料
| 型號： | DDTA113ZE-DIE |
| 廠商： | Diodes Inc. |
| 英文描述： | 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS |
| 中文描述： | 100mA的雙互補預偏置三極管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 1063K |
| 代理商： | DDTA113ZE-DIE |
DS30761 Rev. 4 - 2
2 of 7
DCX100NS
www.diodes.com
Sub-Component Device - Pre-Biased NPN Transistor
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
V
cc
V
in
I
c
Value
50
-10 to +40
50
Unit
V
V
mA
Supply Voltage
Input Voltage
Output Current
Electrical Characteristics: Pre-Biased PNP Transistor
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
D
R1
R2/R1
f
T
Min
-0.3
Typ
Max
Unit
V
V
V
mA
uA
Test Condition
Input Voltage
V
CC
= -5V, I
O
= -100uA
V
O
= -0.3V, I
O
= -20mA
I
O
/I
I
= -10mA / -0.5mA
V
I
= -5V
V
CC
= -50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
-3.0
-0.3
-7.2
-0.5
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistor Ratio Tolerance
Gain-Bandwidth Product
-0.1
33
-30
0.8
+30
1.2
%
%
1
250
MHz
V
CE
= -10V, I
E
= -5mA, f = 100 MHz
Electrical Characteristics: Pre-Biased NPN Transistor
@ T
A
= 25
°
C unless otherwise specified
Characteristic
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
D
R1
R2/R1
f
T
Min
0.5
Typ
1.18
1.85
0.1
Max
Unit
V
V
V
mA
uA
Test Condition
Input Voltage
V
CC
= 5V, I
O
= 100uA
V
O
= 0.3V, I
O
= 10mA
I
O
/I
I
= 10mA / 0.5mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
3
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor Tolerance
Resistor Ratio Tolerance
Gain-Bandwidth Product
0.3
0.88
0.5
30
-30
0.8
+30
1.2
%
1
250
MHz
V
CE
= 10V, I
E
= 5mA, f = 100 MHz
Typical Characteristics
@ T
amb
= 25
°
C unless otherwise specified
-50
0
50
100
150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE (
°
C)
A
Fig. 3 Power Derating Curve (Total Device)
P , POWER DISSIPATION (mW)
d
C
U
D
O
R
P
W
E
N
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DDTA113ZKA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR |
| DDTA113ZKA_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR |
| DDTA113ZKA_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| DDTA113ZKA-7 | 功能描述:開關晶體管 - 偏壓電阻器 200MW 1KW 10KW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| DDTA113ZKA-7-F | 功能描述:開關晶體管 - 偏壓電阻器 200MW 1K 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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