參數(shù)資料
型號(hào)： DCX4710H_1
廠商： Diodes Inc.
英文描述： 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
中文描述： 100mA的雙互補(bǔ)預(yù)偏置三極管
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 195K
代理商： DCX4710H_1
Pre-Biased NPN Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input
Off Voltage
Output
Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Output On
Voltage
Input On Voltage
Input Current
Input Resistor +/- 30% (Base)
Resistor
Ratio
SMALL SIGNAL CHARACTERISTICS
I
CBO
50
50
1.2
100
0.5
0.5
nA
V
V
V
μ
A
V
CB
= 50V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CE
= 5V, I
C
= 100
μ
A
V
CC
= 50V, V
I
= 0V
V
(BR)CBO
V
(BR)CEO
V
I(OFF)
I
O(OFF)
h
FE
35
3
7
0.8
0.1
1.6
10
1
0.25
0.3
0.88
13
1.2
V
V
V
mA
K
Ω
V
CE
= 5V, I
C
= 5mA
I
C
= -10mA, I
B
= -0.3mA
I
O
/I
I
= 10mA/0.5mA
V
O
= 0.3V, I
C
= 2mA
V
I
= 5V
V
CE(sat)
V
O(ON)
V
I(ON)
I
I
R1
(R2/R1)
f
T
250
MHz
V
CE
= 10V, I
E
= 5mA,
f = 100MHz
Transition Frequency (Gain bandwidth product)
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
Typical Characteristics
@T
amb
= 25°C unless otherwise specified
P
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve (Note 3)
0
0
Notes: 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
DS30871 Rev. 6 - 2
3 of 7
www.diodes.com
DCX4710H
Diodes Incorporated
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DCX4710H-7 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 PREBIASED TRANSISTOR SOT-563 150MW RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
DCX51 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR
DCX51-13 功能描述:兩極晶體管 - BJT 1000W -45Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DCX51-16-13 功能描述:兩極晶體管 - BJT 1000W -45Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
DCX52 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR
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