參數(shù)資料
型號： DCX4710H_1
廠商： Diodes Inc.
英文描述： 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
中文描述： 100mA的雙互補預(yù)偏置三極管
文件頁數(shù)： 2/7頁
文件大小： 195K
代理商： DCX4710H_1
DS30871 Rev. 6 - 2
2 of 7
www.diodes.com
DCX4710H
Diodes Incorporated
Sub-Component Device – Pre-Biased PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
CBO
V
CEO
V
CC
V
IN
I
C(max)
Value
-50
-50
-50
+6 to -40
-100
Unit
V
V
V
V
mA
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current (dc)
Sub-Component Device – Pre-Biased NPN Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
V
CBO
V
CEO
V
CC
V
IN
I
C(max)
Value
50
50
50
-10 to +40
100
Unit
V
V
V
V
mA
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current (dc)
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Output Off Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Output On Voltage
Input On Voltage (Load is present)
Input Current
Input
Resistor
+/- 30% (Base)
Pull-up Resistor (Base to Vcc supply)
Resistor Ratio
SMALL SIGNAL CHARACTERISTICS
I
CBO
-50
-50
-100
-0.3
-0.5
nA
V
V
V
μ
A
V
CB
= -50V, I
E
= 0
I
C
= -10
μ
A, I
E
= 0
I
C
= -4mA, I
B
= 0
V
CE
= -5V, I
C
= -100
μ
A
V
CC
= -50V, V
I
= 0V
V
(BR)CBO
V
(BR)CEO
V
I(OFF)
I
O(OFF)
h
FE
80
-1.4
7
32
20
-0.1
-0.9
10
47
V
V
V
mA
K
Ω
K
Ω
%
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.3mA
I
O
/I
I
= -10mA/-0.5mA
V
O
= -0.3V, I
C
= -2mA
V
I
= -5V
V
CE(sat)
V
O(ON)
V
I(ON)
I
I
Δ
R1
R2
Δ
(R2/R1)
-0.25
-0.3
-0.88
13
62
20
Transition Frequency (gain bandwidth product)
f
T
250
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
*Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
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