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參數(shù)資料
| 型號： | D4564841G5 |
| 廠商： | Elpida Memory, Inc. |
| 英文描述： | 64M-bit Synchronous DRAM 4-bank, LVTTL |
| 中文描述： | 6400位同步DRAM 4銀行，LVTTL |
| 文件頁數(shù)： | 1/85頁 |
| 文件大小： | 919K |
| 代理商： | D4564841G5 |
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
MOS INTEGRATED CIRCUIT
μ
PD4564441, 4564841, 4564163
64M-bit Synchronous DRAM
4-bank, LVTTL
DATA SHEET
Document No. E0149N10 (Ver.1.0)
(Previous No. M12621EJCV0DS00)
Date Published August 2001 (K)
Printed in Japan
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Description
The
μ
PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access
memories, organized as 4,194,304
×
4
×
4, 2,097,152
×
8
×
4, 1,048,576
×
16
×
4 (word
×
bit
×
bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 54-pin TSOP (II).
Features
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by A12 and A13 (Bank Select)
Byte control (
×
16) by LDQM and UDQM
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (auto) refresh and self refresh
×
4,
×
8,
×
16 organization
Single 3.3 V
±
0.3 V power supply
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
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