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| 型號(hào)： | CYM8301BV33 |
| 英文描述： | Memory |
| 中文描述： | 內(nèi)存 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 335K |
| 代理商： | CYM8301BV33 |
CYM8301BV33
Document #: 38-05294 Rev. **
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
–
55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[1]
......
–
0.5V to 4.6V
DC Voltage Applied to Outputs
in High-Z State
[1]
....................................
–
0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
.................................
–
0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage ..........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
–
40
°
C to +85
°
C
V
CC
Commercial
Industrial
3.3V ± 5%
3.3V ± 5%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Test Conditions
[2]
V
CC
= Min.,
I
OH
=
–
4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
CYM8301BV33-10 CYM8301BV33-12/15
Min.
Max.
2.4
Unit
V
Min.
2.4
Max.
Output HIGH Voltage
V
OL
Output LOW Voltage
0.4
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
0.8
+10
+10
2.2
V
CC
+ 0.3
0.8
+10
+10
V
V
IL
I
IX
I
OZ
Input LOW Voltage
[1]
Input Load Current
Output Leakage
Current
V
CC
Operating
Supply Current
–
0.5
–
10
–
10
–
0.5
–
10
–
10
V
μ
A
μ
A
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
–
0.3V,
V
IN
> V
CC
–
0.3V,
or V
IN
< 0.3V, f = 0
I
CC
300
300
mA
I
SB1
Automatic CE
Power-down Current
—
TTL Inputs
Automatic CE
Power-down Current
—
CMOS Inputs
150
150
mA
I
SB2
30
30
mA
Capacitance
[3]
Parameter
Description
Test Conditions
Max.
Unit
C
IN
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
8
pF
C
OUT
Output Capacitance
8
pF
Notes:
1.
2.
3.
V
(min.) =
–
2.0V for pulse durations of less than 20 ns.
CE is a combination of CE1, CE2 and CE3.
Tested initially and after any design or process changes that may affect these parameters.
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