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參數(shù)資料
| 型號： | CYC1021B-12VC |
| 英文描述： | IC-1MB CMOS SRAM |
| 中文描述： | 集成電路1MB的CMOS SRAM的 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 308K |
| 代理商： | CYC1021B-12VC |
CY7C1021B
4
Switching Waveforms
Notes:
9.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
Device is continuously selected. OE, CE, BHE and/or BHE = V
IL
.
Read Cycle No. 1
PREVIOUS DATA VALID
DATA VALID
t
RC
t
AA
t
OHA
1021B-5
ADDRESS
DATA OUT
[9, 10]
Read Cycle No. 2 (OEControlled)
1021B-6
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZBE
t
PD
HIGH
OE
CE
ICC
I
I
SB
IMPEDANCE
ADDRESS
DATA OUT
V
CC
SUPPLY
CURRENT
t
DBE
t
LZBE
t
HZCE
BHE, BLE
[10, 11]
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