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參數(shù)資料
| 型號： | CYC1021B-12VC |
| 英文描述： | IC-1MB CMOS SRAM |
| 中文描述： | 集成電路1MB的CMOS SRAM的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 308K |
| 代理商： | CYC1021B-12VC |
CY7C1021B
2
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[1]
.... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State
[1]
......................................–0.5V to V
CC
+0.5V
DC Input Voltage
[1]
...................................–0.5V to V
CC
+0.5V
Electrical Characteristics
Over the Operating Range
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage ...........................................>2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.....................................................>200 mA
Operating Range
Range
Ambient
Temperature
[2]
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
Commercial
Industrial
5V
±
10%
5V
±
10%
Parameter
V
OH
Description
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
[1]
Input Load
Current
Output
Leakage
Current
Output Short
Circuit
Current
[3]
V
CC
Operating
Supply
Current
Automatic CE
Power-Down
Current
—TTL Inputs
Test
Conditions
V
CC
= Min.,
I
OH
= –4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
7C1021B-9
Min.
2.4
7C1021B-10
Min.
2.4
7C1021B-12
Min.
2.4
7C1021B-15
Min.
2.4
7C1021B-20
Min.
2.4
Unit
V
Max.
2.4
Max.
Max.
Max.
Max.
V
OL
0.4
0.4
0.4
0.4
0.4
V
V
IH
2.2
6.0
2.2
6.0
2.2
6.0
2.2
6.0
2.2
6.0
V
V
IL
-0.5
0.5
0.5
0.8
–0.5
0.8
–0.5
0.8
–0.5
0.8
V
I
IX
GND < V
I
< V
CC
1
+
1
1
+1
–1
+1
–1
+1
–1
+1
μ
A
I
OZ
GND < V
I
< V
CC
,
Output Disabled
1
+
1
1
+1
–1
+1
–1
+1
–1
+1
μ
A
I
OS
V
CC
= Max.,
V
OUT
= GND
300
300
–300
–300
–300
mA
I
CC
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
175
150
140
130
120
mA
I
SB1
Max. V
CC
,
CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
,
f = f
MAX
Max. V
CC
,
CE >
V
CC
– 0.3V,
V
IN
> V
CC
–
0.3V,
or V
IN
<
0.3V, f = 0
40
40
40
40
40
mA
I
SB2
Automatic CE
Power-Down
Current
—CMOS
Inputs
10
0.5
10
0.5
10
0.5
10
0.5
10
0.5
mA
mA
L
Shaded areas contain preliminary information.
Capacitance
[4]
Parameter
Description
Test Conditions
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Notes:
1.
2.
3.
4.
Input Capacitance
Output Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
V
IL
(min.) = –2.0V for pulse durations of less than 20 ns.
T
is the “Instant On” case temperature.
Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Tested initially and after any design or process changes that may affect these parameters.
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